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1. WO2020158657 - FILM FORMING APPARATUS AND FILM FORMING METHOD

Publication Number WO/2020/158657
Publication Date 06.08.2020
International Application No. PCT/JP2020/002738
International Filing Date 27.01.2020
IPC
C30B 25/02 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
H01L 21/205 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C30B 29/36 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
36Carbides
C23C 16/455 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
455characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
CPC
C23C 16/42
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
42Silicides
C23C 16/455
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
C23C 16/46
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
46characterised by the method used for heating the substrate
C30B 25/02
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
C30B 29/36
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
36Carbides
H01L 21/205
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth ; solid phase epitaxy
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
Inventors
  • 原島 正幸 HARASHIMA, Masayuki
  • 佐野 志生 SANO, Yukio
  • 三澤 由宗 MISAWA, Yoshimune
  • 中村 充一 NAKAMURA, Michikazu
  • 小林 洋克 KOBAYASHI, Hirokatsu
  • 木下 秀俊 KINOSHITA, Hidetoshi
Agents
  • 金本 哲男 KANEMOTO, Tetsuo
  • 萩原 康司 HAGIWARA, Yasushi
  • 扇田 尚紀 OGITA, Naoki
  • 三根 卓也 MINE, Takuya
Priority Data
2019-01711401.02.2019JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) FILM FORMING APPARATUS AND FILM FORMING METHOD
(FR) APPAREIL DE FORMATION DE FILM ET PROCÉDÉ DE FORMATION DE FILM
(JA) 成膜装置及び成膜方法
Abstract
(EN) This film forming apparatus for forming a SiC film on a substrate to be treated has: a susceptor to be heated by induction heating; a placement base which is disposed within the susceptor and rotates about a rotation axis in a state in which the substrate to be treated is placed thereon; and a gas supply mechanism for supplying a treatment gas from a side to the internal space of the susceptor so that the treatment gas flows along the surface of the substrate to be treated placed on the placement base. The internal space of the susceptor has, on the upstream side of the placement base in the direction of flow of the treatment gas, a pre-heating space in which the treatment gas is pre-heated before being supplied to the substrate to be treated placed on the placement base.
(FR) L'invention concerne un appareil de formation de film pour former un film de SiC sur un substrat à traiter comprenant : un suscepteur à chauffer par chauffage par induction ; une base de placement qui est disposée à l'intérieur du suscepteur et tourne autour d'un axe de rotation dans un état dans lequel le substrat à traiter est placé sur celui-ci ; et un mécanisme d'alimentation en gaz pour fournir un gaz de traitement d'un côté à l'espace interne du suscepteur de telle sorte que le gaz de traitement s'écoule le long de la surface du substrat à traiter placé sur la base de placement. L'espace interne du suscepteur a, sur le côté amont de la base de placement dans la direction d'écoulement du gaz de traitement, un espace de préchauffage dans lequel le gaz de traitement est préchauffé avant d'être fourni au substrat à traiter placé sur la base de placement.
(JA) 処理対象基板にSiC膜を形成する成膜装置であって、誘導加熱により加熱されるサセプタと、前記サセプタ内に配置され、処理対象基板が載置された状態で回転軸を中心に回転する載置台と、前記載置台に載置された処理対象基板の表面に沿って処理ガスが流れるように、前記サセプタの内部空間に対し側方から前記処理ガスを供給するガス供給機構と、を有し、前記サセプタの内部空間は、前記処理ガスの流れ方向における前記載置台より上流側に、前記載置台に載置された処理対象基板に供給される前記処理ガスを予熱する予熱空間を有する。
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