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1. WO2020158210 - ETCHING METHOD

Publication Number WO/2020/158210
Publication Date 06.08.2020
International Application No. PCT/JP2019/048847
International Filing Date 13.12.2019
IPC
H01L 21/308 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
308using masks
CPC
H01L 21/308
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
308using masks
Applicants
  • 信越半導体株式会社 SHIN-ETSU HANDOTAI CO., LTD. [JP]/[JP]
Inventors
  • 丸山 恭剛 MARUYAMA Yasutake
  • 更級 晋 SARASHINA Susumu
Agents
  • 好宮 幹夫 YOSHIMIYA Mikio
  • 小林 俊弘 KOBAYASHI Toshihiro
Priority Data
2019-01488730.01.2019JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) ETCHING METHOD
(FR) PROCÉDÉ DE GRAVURE
(JA) エッチング方法
Abstract
(EN) This etching method, in which an etching solution is dripped onto a wafer surface and the wafer surface is etched by rotating the wafer, is characterized in that the surface shape of the wafer prior to etching is measured, and during etching, in addition to dripping the etching solution, a rinse solution that suppresses etching of the wafer surface by the etching solution is dripped onto the wafer surface, and a position for dripping the etching solution and a position for dripping the rinse solution are determined on the basis of the measured surface shape of the wafer prior to etching, and the wafer surface is etched. Thus, an etching method is provided which, for wafers of any surface shape, can improve the surface shape by spin etching.
(FR) Procédé de gravure, dans lequel une solution de gravure est égouttée sur une surface de plaquette et la surface de plaquette est gravée par rotation de la plaquette, le procédé étant caractérisé en ce que la forme de surface de la plaquette avant la gravure est mesurée, et pendant la gravure, en plus de l'égouttement de la solution de gravure, une solution de rinçage qui supprime la gravure de la surface de plaquette par la solution de gravure est égouttée sur la surface de plaquette, et une position pour égoutter la solution de gravure et une position pour égoutter la solution de rinçage sont déterminées sur la base de la forme de surface mesurée de la plaquette avant la gravure, et la surface de plaquette est gravée. Ainsi, l'invention concerne un procédé de gravure qui, pour des plaquettes de n'importe quelle forme de surface, peut améliorer la forme de surface par gravure par centrifugation.
(JA) 本発明は、エッチング液をウェーハの表面に滴下し、かつ前記ウェーハを回転させることで、前記ウェーハの表面のエッチングを行うエッチング方法において、前記エッチング前の前記ウェーハの表面形状を測定し、前記エッチングにおいて、前記エッチング液の滴下とともに、前記エッチング液による前記ウェーハの表面のエッチングを抑制するリンス液を前記ウェーハの表面に滴下し、前記エッチング液を滴下する位置と前記リンス液を滴下する位置を、前記測定されたエッチング前の前記ウェーハの表面形状に基づき決定して、前記ウェーハの表面のエッチングを行うことを特徴とするエッチング方法である。これにより、どのような表面形状を持つウェーハであっても、スピンエッチングにより表面形状の改善を図ることが可能なエッチング方法が提供される。
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