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1. WO2020142480 - QUANTUM DOT LIGHT-EMITTING DIODES COMPRISING DOPED ZNO ELECTRON TRANSPORT LAYER

Publication Number WO/2020/142480
Publication Date 09.07.2020
International Application No. PCT/US2019/069049
International Filing Date 31.12.2019
IPC
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 33/06 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
04with a quantum effect structure or superlattice, e.g. tunnel junction
06within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 51/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
CPC
H01L 33/06
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
04with a quantum effect structure or superlattice, e.g. tunnel junction
06within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 51/502
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
5012Electroluminescent [EL] layer
502comprising active inorganic nanostructures, e.g. luminescent quantum dots
H01L 51/5076
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
5048Carrier transporting layer
5072Electron transporting layer
5076comprising a dopant
H01L 51/508
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
5048Carrier transporting layer
5072Electron transporting layer
508having a multilayered structure
Applicants
  • NANOPHOTONICA, INC. [US]/[US]
Inventors
  • HOLLOWAY, Paul, H.
  • KIM, Baek, Hyun
  • TITOV, Alexandre
  • ACHARYA, Krishna
Agents
  • HSI, Jeffrey, D.
  • ALAM, Saad
  • AMUNDSEN, Eric, L.
  • ATTISHA, Michael, J.
  • BAKER, C., Hunter
Priority Data
62/787,00131.12.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) QUANTUM DOT LIGHT-EMITTING DIODES COMPRISING DOPED ZNO ELECTRON TRANSPORT LAYER
(FR) DIODES ÉLECTROLUMINESCENTES À POINTS QUANTIQUES COMPRENANT UNE COUCHE DE TRANSPORT D'ÉLECTRONS ZNO DOPÉ
Abstract
(EN)
Articles and methods related to quantum dot light-emitting diodes are generally provided. A quantum dot light-emitting diode may comprise a first electrode, a quantum dot light-emitting layer disposed on the first electrode, an electron transport layer disposed on the quantum dot light-emitting layer, and second electrode disposed on the electron transport layer. The electron transport layer may comprise nanoparticles comprising ZnO doped with one or more dopants and/or capped with one or more ligands. The quantum dot light-emitting layer may comprise two or more electron transport layers, each of which may independently comprise ZnO doped with one or more dopants and/or capped with one or more ligands. The nanoparticles may have a number average diameter of less than or equal to 5 nm.
(FR)
L'invention concerne d'une manière générale des articles et des procédés associés à des diodes électroluminescentes à points quantiques. Une diode électroluminescente à points quantiques peut comprendre une première électrode, une couche électroluminescente à points quantiques disposée sur la première électrode, une couche de transport d'électrons disposée sur la couche électroluminescente à points quantiques, et une seconde électrode disposée sur la couche de transport d'électrons. La couche de transport d'électrons peut comprendre des nanoparticules comprenant du ZnO dopé avec un ou plusieurs dopants et/ou coiffées par un ou plusieurs ligands. La couche électroluminescente à points quantiques peut comprendre deux ou plusieurs couches de transport d'électrons, dont chacune peut comprendre indépendamment du ZnO dopé avec un ou plusieurs dopants et/ou coiffée d'un ou de plusieurs ligands. Les nanoparticules peuvent avoir un diamètre moyen en nombre inférieur ou égal à 5 nm.
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