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1. WO2020142368 - THREE-DIMENSIONAL DYNAMIC RANDOM-ACCESS MEMORY ARRAY

Publication Number WO/2020/142368
Publication Date 09.07.2020
International Application No. PCT/US2019/068716
International Filing Date 27.12.2019
IPC
H01L 27/108 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
108Dynamic random access memory structures
H01L 27/06 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
CPC
G11C 11/4023
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
402with charge regeneration individual to each memory cell, i.e. internal refresh
4023using field effect transistors
G11C 11/4045
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
403with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
404with one charge-transfer gate, e.g. MOS transistor, per cell
4045using a plurality of serially connected access transistors, each having a storage capacitor
G11C 11/4097
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
407for memory cells of the field-effect type
409Read-write [R-W] circuits 
4097Bit-line organisation, e.g. bit-line layout, folded bit lines
G11C 5/06
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
5Details of stores covered by G11C11/00
06Arrangements for interconnecting storage elements electrically, e.g. by wiring
H01L 27/10805
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
108Dynamic random access memory structures
10805with one-transistor one-capacitor memory cells
H01L 27/10808
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
108Dynamic random access memory structures
10805with one-transistor one-capacitor memory cells
10808the storage electrode stacked over transistor
Applicants
  • MICRON TECHNOLOGY, INC. [US]/[US]
Inventors
  • MACHKAOUTSAN, Vladimir
  • HILL, Richard J.
Agents
  • PERDOK, Monique M.
  • ARORA, Suneel / U.S. Reg. No. 42,267
  • BEEKMAN, Marvin / U.S. Reg. No. 38,377
  • BLACK, David W. / U.S. Reg. No. 42,331
  • LANG, Roger / U.S. Reg. No. 58,829
  • SCHEER, Bradley W. / U.S. Reg. No. 47,059
Priority Data
62/786,98531.12.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) THREE-DIMENSIONAL DYNAMIC RANDOM-ACCESS MEMORY ARRAY
(FR) RÉSEAU DE MÉMOIRES VIVES DYNAMIQUES TRIDIMENSIONNELLES
Abstract
(EN)
Disclosed are monolithically integrated three-dimensional (3D) DRAM array structures that include one-transistor, one-capacitor (1T1C) cells embedded at multiple device tiers of a layered substrate assembly. In some embodiments, vertical electrically conductive data-line and ground pillars extending through the substrate assembly provide the transistor source and ground voltages, and horizontal electrically conductive access lines at multiple device levels provide the transistor gate voltages. Process flows for fabricating the 3D DRAM arrays are also described.
(FR)
L'invention concerne des structures de réseau DRAM tridimensionnelles (3D) intégrées de manière monolithique qui comprennent des cellules à un transistor, un condensateur uniques (1T1C) intégrées à de multiples niveaux de dispositif d'un ensemble substrat stratifié. Dans certains modes de réalisation, des colonnes de données électriquement conductrices verticales et des piliers de masse s'étendant à travers l'ensemble substrat fournissent les tensions de masse et de source de transistor, et des lignes d'accès électriquement conductrices horizontales à de multiples niveaux de dispositif fournissent les tensions de grille de transistor. L'invention concerne également des flux de traitement pour fabriquer les réseaux de DRAM 3D.
Also published as
Latest bibliographic data on file with the International Bureau