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1. WO2020142292 - METHOD, SYSTEM, APPARATUS FOR DIFFERENTIAL CURRENT INJECTION

Publication Number WO/2020/142292
Publication Date 09.07.2020
International Application No. PCT/US2019/068150
International Filing Date 20.12.2019
IPC
H01S 5/14 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
14External cavity lasers
CPC
H01S 5/0014
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
0014Measuring characteristics or properties thereof
H01S 5/04254
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
04Processes or apparatus for excitation, e.g. pumping, ; e.g. by electron beams
042Electrical excitation ; ; Circuits therefor
0425Electrodes, e.g. characterised by the structure
04254characterised by the shape
H01S 5/04256
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
04Processes or apparatus for excitation, e.g. pumping, ; e.g. by electron beams
042Electrical excitation ; ; Circuits therefor
0425Electrodes, e.g. characterised by the structure
04256characterised by the configuration
H01S 5/2036
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave ; ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
2036Broad area lasers
H01S 5/3402
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers]
3401having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
3402intersubband lasers, e.g. transitions within the conduction or valence bands
Applicants
  • NLIGHT, INC. [US]/[US]
Inventors
  • KANSKAR, Manoj
  • CHEN, Zhigang
Agents
  • CRAIG, Michelle
Priority Data
62/787,17231.12.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD, SYSTEM, APPARATUS FOR DIFFERENTIAL CURRENT INJECTION
(FR) PROCÉDÉ, SYSTÈME ET APPAREIL D'INJECTION DE COURANT DIFFÉRENTIEL
Abstract
(EN)
A laser diode, comprising a transverse waveguide comprising an active layer between an n-type semiconductor layer and a p-type semiconductor layer wherein the transverse waveguide is bounded by a lower index n-cladding layer on an n-side of the transverse waveguide and a lower index p-cladding layer on a p-side of the transverse waveguide a cavity that is orthogonal to the transverse waveguide, wherein the cavity is bounded in a longitudinal direction at a first end by a high reflector (HR) facet and at a second end by a partial reflector (PR) facet, and a first contact layer electrically coupled to the waveguide and configured to vary an amount of current injected into the waveguide in the longitudinal direction so as to inject more current near the HR facet than at the PR facet.
(FR)
L'invention concerne une diode laser, comprenant un guide d'ondes transversal comprenant une couche active entre une couche semi-conductrice de type n et une couche semi-conductrice de type p, le guide d'ondes transversal étant délimité par une couche de gainage n d'indice inférieur sur un côté n du guide d'ondes transversal et une couche de gainage p d'indice inférieur sur un côté p du guide d'ondes transversal, une cavité qui est orthogonale au guide d'ondes transversal, la cavité étant délimitée dans une direction longitudinale au niveau d'une première extrémité par une facette de réflecteur élevée (HR) et au niveau d'une seconde extrémité par une facette de réflecteur partielle (PR), et une première couche de contact couplée électriquement au guide d'ondes et configurée pour faire varier une quantité de courant injectée dans le guide d'ondes dans la direction longitudinale de façon à injecter plus de courant à proximité de la facette HR qu'au niveau de la facette PR.
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