Processing

Please wait...

PATENTSCOPE will be unavailable a few hours for maintenance reason on Tuesday 27.07.2021 at 12:00 PM CEST
Settings

Settings

Goto Application

1. WO2020141758 - TRANSISTOR ELEMENT, TERNARY INVERTER APPARATUS COMPRISING SAME, AND METHOD FOR PRODUCING SAME

Publication Number WO/2020/141758
Publication Date 09.07.2020
International Application No. PCT/KR2019/017785
International Filing Date 16.12.2019
IPC
H01L 21/8238 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8238Complementary field-effect transistors, e.g. CMOS
H01L 29/10 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 27/092 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
085including field-effect components only
088the components being field-effect transistors with insulated gate
092complementary MIS field-effect transistors
CPC
H01L 21/8238
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
8238Complementary field-effect transistors, e.g. CMOS
H01L 27/092
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
085including field-effect components only
088the components being field-effect transistors with insulated gate
092complementary MIS field-effect transistors
H01L 29/10
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
Applicants
  • 울산과학기술원 UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY) [KR]/[KR]
Inventors
  • 김경록 KIM, Kyung Rok
  • 정재원 JEONG, Jae Won
  • 최영은 CHOI, Young Eun
  • 김우석 KIM, Woo Seok
  • 장지원 CHANG, Ji Won
Agents
  • 리앤목 특허법인 Y.P.LEE, MOCK & PARTNERS
Priority Data
10-2018-017423131.12.2018KR
10-2019-008152005.07.2019KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) TRANSISTOR ELEMENT, TERNARY INVERTER APPARATUS COMPRISING SAME, AND METHOD FOR PRODUCING SAME
(FR) ÉLÉMENT DE TRANSISTOR, APPAREIL D'ONDULEUR TERNAIRE LE COMPRENANT ET PROCÉDÉ DE PRODUCTION ASSOCIÉ
(KO) 트랜지스터 소자, 이를 포함하는 삼진 인버터 장치, 및 이의 제조 방법
Abstract
(EN)
A transistor element according to the present invention comprises: a substrate; a fin structure extending in the parallel direction on the substrate; source and drain regions provided on the upper part of the fin structure; a constant current-forming layer provided on the lower part of the fin structure; a gate insulating film provided on both sides surfaces and top surface of the upper part of the fin structure; and a gate electrode provided on the gate insulating film, wherein the gate electrode is provided between the source and drain regions on the fin structure, and constant current-forming layer establishes a constant current between the drain region and substrate, and the constant current is independent of the gate voltage applied to the gate electrode.
(FR)
La présente invention concerne un élément de transistor comprenant : un substrat ; une structure d'ailette s'étendant dans la direction parallèle sur le substrat ; des régions de source et de drain disposées sur la partie supérieure de la structure d'ailette ; une couche de formation de courant constant disposée sur la partie inférieure de la structure d'ailette; un film d'isolation de grille disposé sur les deux surfaces latérales et la surface supérieure de la partie supérieure de la structure d'ailette ; et une électrode de grille disposée sur le film d'isolation de grille, l'électrode de grille étant disposée entre les régions de source et de drain sur la structure d'ailette, et la couche de formation de courant constant établissant un courant constant entre la région de drain et le substrat, et le courant constant étant indépendant de la tension de grille appliquée à l'électrode de grille.
(KO)
트랜지스터 소자는 기판, 기판 상에서 기판의 상면에 평행한 방향으로 연장하는 핀 구조체, 핀 구조체의 상부에 제공되는 소스 영역 및 드레인 영역, 핀 구조체의 하부에 제공되는 정전류 형성층, 핀 구조체의 상부의 양 측면들 및 상면 상에 제공되는 게이트 절연막, 및 게이트 절연막 상에 제공되는 게이트 전극을 포함하되, 게이트 전극은 핀 구조체 상에서 소스 영역 및 드레인 영역 사이에 제공되고, 정전류 형성층은 드레인 영역과 기판 사이에 정전류를 형성하고, 정전류는 게이트 전극에 인가되는 게이트 전압으로부터 독립적이다.
Also published as
Latest bibliographic data on file with the International Bureau