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1. WO2020141756 - TRANSISTOR DEVICE, TERNARY INVERTER DEVICE INCLUDING SAME, AND MANUFACTURING METHOD THEREFOR

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Publication Number WO/2020/141756
Publication Date 09.07.2020
International Application No. PCT/KR2019/017782
International Filing Date 16.12.2019
IPC
H01L 21/8238 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8238Complementary field-effect transistors, e.g. CMOS
H01L 29/10 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 27/092 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
085including field-effect components only
088the components being field-effect transistors with insulated gate
092complementary MIS field-effect transistors
H01L 21/265 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with wave or particle radiation
263with high-energy radiation
265producing ion implantation
CPC
H01L 21/265
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
263with high-energy radiation
265producing ion implantation
H01L 21/8238
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
8238Complementary field-effect transistors, e.g. CMOS
H01L 27/092
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
085including field-effect components only
088the components being field-effect transistors with insulated gate
092complementary MIS field-effect transistors
H01L 29/10
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
Applicants
  • 울산과학기술원 UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY) [KR]/[KR]
Inventors
  • 김경록 KIM, Kyung Rok
  • 정재원 JEONG, Jae Won
  • 최영은 CHOI, Young Eun
  • 김우석 KIM, Woo Seok
Agents
  • 리앤목 특허법인 Y.P.LEE, MOCK & PARTNERS
Priority Data
10-2018-017422931.12.2018KR
10-2019-008151905.07.2019KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) TRANSISTOR DEVICE, TERNARY INVERTER DEVICE INCLUDING SAME, AND MANUFACTURING METHOD THEREFOR
(FR) DISPOSITIF DE TRANSISTOR, DISPOSITIF ONDULEUR TERNAIRE LE COMPRENANT ET SON PROCÉDÉ DE FABRICATION
(KO) 트랜지스터 소자, 이를 포함하는 삼진 인버터 장치, 및 이의 제조 방법
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Abstract
(EN)
A transistor device comprises: a substrate; a source area provided at the upper part of the substrate; a drain area spaced apart from the source area in the substrate in a direction parallel to the upper surface of the substrate; a gate electrode provided on the substrate and between the source area and the drain area; a gate insulating film interposed between the gate electrode and the substrate; and a constant current forming layer extending between the source area and the drain area in the direction parallel to the upper surface of the substrate, wherein the constant current forming layer forms a constant current between the drain area and the substrate, and the constant current is independent from a gate voltage applied to the gate electrode.
(FR)
L'invention concerne un dispositif de transistor comprenant : un substrat ; une zone de source disposée au niveau de la partie supérieure du substrat ; une zone de drain espacée de la zone de source dans le substrat dans une direction parallèle à la surface supérieure du substrat ; une électrode de grille disposée sur le substrat et entre la zone de source et la zone de drain ; un film d'isolation de grille interposé entre l'électrode de grille et le substrat ; et une couche de formation de courant constant s'étendant entre la zone de source et la zone de drain dans la direction parallèle à la surface supérieure du substrat, la couche de formation de courant constant formant un courant constant entre la zone de drain et le substrat, et le courant constant étant indépendant d'une tension de grille appliquée à l'électrode de grille.
(KO)
트랜지스터 소자는 기판, 기판 상부에 제공되는 소스 영역, 기판 내에서, 소스 영역으로부터 기판의 상면에 평행한 방향으로 이격된 드레인 영역, 기판 상에서, 소스 영역과 드레인 영역 사이에 제공되는 게이트 전극, 게이트 전극과 기판 사이에 개재되는 게이트 절연막, 및 소스 영역과 드레인 영역 사이에서 기판의 상면에 평행한 방향을 따라 연장되는 정전류 형성층을 포함하되, 정전류 형성층은 드레인 영역과 기판 사이에 정전류를 형성하고, 정전류는 게이트 전극에 인가되는 게이트 전압으로부터 독립적이다.
Also published as
KR1020200083151
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