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1. WO2020141669 - LIQUID PRECURSOR DEGASSER

Publication Number WO/2020/141669
Publication Date 09.07.2020
International Application No. PCT/KR2019/007463
International Filing Date 20.06.2019
IPC
H01L 21/67 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 16/448 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
448characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
H01L 21/687 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
687using mechanical means, e.g. chucks, clamps or pinches
CPC
C23C 16/448
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
448characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
H01L 21/67
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
H01L 21/687
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
687using mechanical means, e.g. chucks, clamps or pinches
Applicants
  • 한국표준과학연구원 KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE [KR]/[KR]
Inventors
  • 윤주영 YUN, Ju-Young
  • 김진태 KIM, Jin-Tae
  • 정낙관 CHUNG, Nak Kwan
  • 안종기 AN, Jong-Ki
  • 심섭 SHIM, Seob
  • 강고루 KANG, Goru
Agents
  • 이준성 LEE, Joon Sung
Priority Data
10-2018-017332731.12.2018KR
10-2018-017332831.12.2018KR
10-2018-017332931.12.2018KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) LIQUID PRECURSOR DEGASSER
(FR) DÉGAZEUR DE PRÉCURSEUR LIQUIDE
(KO) 액상 전구체 디개서
Abstract
(EN)
The present invention relates to a liquid precursor degasser comprising: a canister forming an accommodation space in which a liquid precursor to be degassed is accommodated; a vacuum pump connected to the canister through a vacuum line and setting a vacuum state in the accommodation space of the canister in which the liquid precursor is accommodated; and an exposed surface area increasing means provided in the canister and increasing a surface area of the liquid precursor accommodated in the accommodation space exposed on a degassing space that is an empty space in the accommodation space, thereby providing a technique for increasing degassing efficiency of the liquid precursor and increasing measurement accuracy for vapor pressure of the liquid precursor.
(FR)
La présente invention concerne un dégazeur de précurseur liquide comprenant : une cartouche formant un espace de réception dans lequel est reçu un précurseur liquide à dégazer ; une pompe à vide reliée à la cartouche par l'intermédiaire d'une conduite d'aspiration et réglant un état de vide dans l'espace de réception de la cartouche dans lequel le précurseur liquide est reçu ; et un moyen d'augmentation de surface exposée, disposé dans la cartouche et augmentant une surface du précurseur liquide reçu dans l'espace de réception exposé sur un espace de dégazage qui est un espace vide dans l'espace de réception, ce qui permet d'assurer une technique permettant d'augmenter l'efficacité de dégazage du précurseur liquide et d'augmenter la précision de mesure de la pression de vapeur du précurseur liquide.
(KO)
본 발명은 액상 전구체 디개서에 관한 것으로, 디개싱(degassing)시킬 액상 전구체가 수용되는 수용공간을 형성하는 캐니스터; 캐니스터와 진공라인을 통해 연결되고, 캐니스터에서 액상 전구체가 수용된 수용공간 내에 진공상태를 설정하여 주는 진공펌프; 및 캐니스터 내 수용공간에 마련되며, 수용공간 내에 수용된 액상 전구체가 수용공간 내 빈 공간인 디개싱 공간 상에 노출되는 표면적을 증대시켜주는 노출 표면적 증대수단이 마련되어 있어, 액상 전구체의 디개싱 효율을 증대시켜주며, 액상 전구체의 증기압에 대한 측정 정확성을 증진시켜줄 수 있는 기술이 개시된다.
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