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1. WO2020141042 - SEMICONDUCTOR DETECTOR AND METHOD OF FABRICATING SAME

Publication Number WO/2020/141042
Publication Date 09.07.2020
International Application No. PCT/EP2019/083988
International Filing Date 06.12.2019
IPC
H01J 37/244 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02Details
244Detectors; Associated components or circuits therefor
G01T 1/28 2006.1
GPHYSICS
01MEASURING; TESTING
TMEASUREMENT OF NUCLEAR OR X-RADIATION
1Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
16Measuring radiation intensity
28with secondary-emission detectors
H01L 31/115 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
115Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
H01J 37/28 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
26Electron or ion microscopes; Electron- or ion-diffraction tubes
28with scanning beams
CPC
H01J 2237/2441
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
244Detection characterized by the detecting means
2441Semiconductor detectors, e.g. diodes
H01J 2237/24475
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
244Detection characterized by the detecting means
24475Scattered electron detectors
H01J 37/244
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02Details
244Detectors; Associated components or circuits therefor
H01J 37/28
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
26Electron or ion microscopes; Electron or ion diffraction tubes
28with scanning beams
H01L 31/115
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
115Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
Applicants
  • ASML NETHERLANDS B.V. [NL]/[NL]
Inventors
  • LORITO, Gianpaolo
  • NIHTIANOV, Stoyan
  • LIANG, Xinqing
  • KANAI, Kenichi
Agents
  • PETERS, John Antoine
Priority Data
62/786,86531.12.2018US
62/927,45129.10.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTOR DETECTOR AND METHOD OF FABRICATING SAME
(FR) DÉTECTEUR À SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
Abstract
(EN)
The present disclosure describes a detector used in critical dimension scanning electron microscopes (CD-SEM) and review SEM systems. In one embodiment, the detector includes a semiconductor structure having a p-n junction and a hole through which a scanning beam is passed to a target. The detector also includes a top electrode (250) for the p-n junction (e.g., anode or cathode) that provides an active area for detecting electrons or electromagnetic radiation (e.g., backscattering from the target). The top electrode has a doped layer (230) and a buried portion (260) beneath the doped layer to reduce a series resistance of the top electrode without changing the active area. In another embodiment, an isolation structure can be formed in the semiconductor structure near sidewalls of the hole to electrically isolate the active area from the sidewalls. A method for forming the buried portion of the top electrode is also described.
(FR)
La présente invention concerne un détecteur utilisé dans des microscopes électroniques à balayage pour mesure de dimensions critiques (CD-SEM) et des systèmes SEM d'examen. Dans un mode de réalisation, le détecteur comprend une structure semi-conductrice comportant une jonction p-n et un trou par lequel passe un faisceau de balayage en direction d'une cible. Le détecteur comprend également une électrode supérieure (250) pour la jonction p-n (par exemple, anode ou cathode) qui fournit une zone active servant à détecter des électrons ou un rayonnement électromagnétique (par exemple, rétrodiffusés depuis la cible). L'électrode supérieure comporte une couche dopée (230) et une partie enterrée (260) sous la couche dopée pour réduire une résistance série de l'électrode supérieure sans changer la zone active. Dans un autre mode de réalisation, une structure d'isolation peut être formée dans la structure semi-conductrice à proximité de parois latérales du trou pour isoler électriquement la zone active des parois latérales. L'invention concerne également un procédé pour former la partie enfouie de l'électrode supérieure.
Also published as
KR1020217019390
Latest bibliographic data on file with the International Bureau