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1. WO2020141022 - MULTIPLE RESONANCE NETWORK FOR AN AMPLIFIER

Publication Number WO/2020/141022
Publication Date 09.07.2020
International Application No. PCT/EP2019/050107
International Filing Date 03.01.2019
IPC
H03F 1/08 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
H03F 1/42 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
42Modifications of amplifiers to extend the bandwidth
H03F 3/191 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
189High-frequency amplifiers, e.g. radio frequency amplifiers
19with semiconductor devices only
191Tuned amplifiers
H03G 1/00 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
GCONTROL OF AMPLIFICATION
1Details of arrangements for controlling amplification
H03G 3/30 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
GCONTROL OF AMPLIFICATION
3Gain control in amplifiers or frequency changers
20Automatic control
30in amplifiers having semiconductor devices
H03F 1/56 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
56Modifications of input or output impedances, not otherwise provided for
CPC
H03F 1/086
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
083in transistor amplifiers
086with FET's
H03F 1/42
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
42Modifications of amplifiers to extend the bandwidth
H03F 1/565
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
56Modifications of input or output impedances, not otherwise provided for
565using inductive elements
H03F 2200/168
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
2200Indexing scheme relating to amplifiers
168Two amplifying stages are coupled by means of a filter circuit
H03F 2200/451
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
2200Indexing scheme relating to amplifiers
451the amplifier being a radio frequency amplifier
H03F 3/193
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
189High frequency amplifiers, e.g. radio frequency amplifiers
19with semiconductor devices only
193with field-effect devices
Applicants
  • HUAWEI TECHNOLOGIES CO., LTD. [CN]/[CN]
  • ROSSI, Paolo [IT]/[DE] (US)
Inventors
  • ROSSI, Paolo
Agents
  • KREUZ, Georg
Priority Data
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MULTIPLE RESONANCE NETWORK FOR AN AMPLIFIER
(FR) RÉSEAU À RÉSONANCE MULTIPLE POUR UN AMPLIFICATEUR
Abstract
(EN)
The present invention relates generally to the technical field of broad-band amplifiers for high data-rate wired/optical communications. The invention presents in this technical field a multiple resonance network. The multiple resonance network comprises an input terminal and an output terminal, and at least one resonant circuit including an inductance connected between the input terminal and the output terminal. Further, the multiple resonance network comprises a tuning circuit connected in parallel to the inductance, wherein the tuning circuit includes at least one reactive circuit and/or at least one resistive circuit.
(FR)
La présente invention se rapporte généralement au champ technique des amplificateurs à large bande pour les communications câblées/optiques à haut débit de données. L’invention concerne dans le présent champ technique un réseau à résonance multiple. Le réseau à résonance multiple comprend une borne d’entrée et une borne de sortie, et au moins un circuit résonant incluant une inductance connectée entre la borne d’entrée et la borne de sortie. En outre, le réseau à résonance multiple comprend un circuit de réglage connecté en parallèle à l’inductance, le circuit de réglage incluant au moins un circuit réactif et/ou au moins un circuit résistif.
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