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1. WO2020140790 - PIXEL STRUCTURE FOR FLAT PANEL DETECTOR, FLAT PANEL DETECTOR, AND IMAGE CAPTURING SYSTEM

Publication Number WO/2020/140790
Publication Date 09.07.2020
International Application No. PCT/CN2019/127691
International Filing Date 24.12.2019
IPC
H04N 5/3745 2011.1
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
374Addressed sensors, e.g. MOS or CMOS sensors
3745having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
CPC
G01T 1/24
GPHYSICS
01MEASURING; TESTING
TMEASUREMENT OF NUCLEAR OR X-RADIATION
1Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
16Measuring radiation intensity
24with semiconductor detectors
G01T 1/247
GPHYSICS
01MEASURING; TESTING
TMEASUREMENT OF NUCLEAR OR X-RADIATION
1Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
16Measuring radiation intensity
24with semiconductor detectors
247Detector read-out circuitry
H01L 31/0203
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0203Containers; Encapsulations ; , e.g. encapsulation of photodiodes
H01L 31/085
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
085the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
H04N 5/32
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
32Transforming X-rays
Applicants
  • 京东方科技集团股份有限公司 BOE TECHNOLOGY GROUP CO., LTD. [CN]/[CN]
  • 北京京东方光电科技有限公司 BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 华刚 HUA, Gang
  • 郭旺 GUO, Wang
  • 薛艳娜 XUE, Yanna
  • 张勇 ZHANG, Yong
  • 白璐 BAI, Lu
  • 方浩博 FANG, Haobo
  • 林坚 LIN, Jian
  • 张丽敏 ZHANG, Limin
Agents
  • 北京市柳沈律师事务所 LIU, SHEN & ASSOCIATES
Priority Data
201910009421.304.01.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) PIXEL STRUCTURE FOR FLAT PANEL DETECTOR, FLAT PANEL DETECTOR, AND IMAGE CAPTURING SYSTEM
(FR) STRUCTURE DE PIXEL DESTINÉE À UN DÉTECTEUR À PANNEAU PLAT, DÉTECTEUR À PANNEAU PLAT, ET SYSTÈME DE CAPTURE D'IMAGE
(ZH) 平板探测装置的像素结构、平板探测装置及摄像系统
Abstract
(EN)
A pixel structure for a flat panel detector, a flat panel detector, and an image capturing system. The pixel structure for a flat panel detector comprises: a photodiode (PD) acquiring an optical signal and converting the optical signal into an electrical signal, the photodiode comprising a positive terminal and a negative terminal, and the negative terminal being connected to a bias voltage signal terminal; a signal amplification circuit having a signal input terminal connected to the negative terminal and a signal output terminal connected to a first node (P1); and a first switch transistor (T1) having a control electrode connected to a scan signal line, a first terminal connected to a data signal line, and a second terminal connected to the first node (P1). A structure of the photodiode comprises a substrate (10); a gate (1) formed on the substrate (10); a gate insulation layer (13) formed on the gate (1); an active layer (2) formed at a position corresponding to the gate on the gate insulation layer (13); and a source and drain layer (3) formed on the active layer (2). A first passivation layer (4) is formed on the source and drain layer (3), a second source and drain layer (5) is formed on the first passivation layer (4), a PIN junction (6) is formed on the second source and drain layer (5), and an ITO capping layer (8) and an intermediate spacer layer (7) are formed on the PIN junction (6).
(FR)
L'invention concerne une structure de pixel destinée à un détecteur à panneau plat, un détecteur à panneau plat, et un système de capture d'image. La structure de pixel destinée à un détecteur à panneau plat comprend : une photodiode (PD) acquérant un signal optique et convertissant le signal optique en un signal électrique, la photodiode comprenant une borne positive et une borne négative, et la borne négative étant connectée à une borne de signal de tension de polarisation; un circuit d'amplification de signal comprenant une borne d'entrée de signal connectée à la borne négative et une borne de sortie de signal connectée à un premier noeud (P1); et un premier transistor de commutation (T1) comprenant une électrode de commande connectée à une ligne de signal de balayage, une première borne connectée à une ligne de signal de données, et une seconde borne connectée au premier noeud (P1). Une structure de la photodiode comprend un substrat (10); une grille (1) formée sur le substrat (10); une couche d'isolation de grille (13) formée sur la grille (1); une couche active (2) formée à une position correspondant à la grille sur la couche d'isolation de grille (13); et une couche de source et de drain (3) formée sur la couche active (2). Une première couche de passivation (4) est formée sur la couche de source et de drain (3), une seconde couche de source et de drain (5) est formée sur la première couche de passivation (4), une jonction PIN (6) est formée sur la seconde couche de source et de drain (5), et une couche de recouvrement ITO (8) et une couche d'espacement intermédiaire (7) sont formées sur la jonction PIN (6).
(ZH)
一种平板探测装置的像素结构、平板探测装置及摄像系统。平板探测装置的像素结构包括:光电二极管(PD)采集光信号并将所述光信号转化成电信号,光电二极管包括正极端和负极端,负极端连接偏置电压信号端;信号放大电路的信号输入端与负极端连接,信号放大电路的信号输出端与第一节点(P1)连接;第一开关晶体管(T1)的控制极连接扫描信号线,第一开关晶体管(T1)的第一端连接数据信号线,第一开关晶体管(T1)的第二端连接所述第一节点(P1)。光电二极管结构包括基板(10),基板(10)上形成栅极(1),在栅极(1)上形成栅极绝缘层(13),栅极绝缘层(13)上对应栅极的位置形成有源层(2),有源层(2)上形成源漏极层(3),源漏极层(3)上形成第一钝化层(4),第一钝化层(4)上形成第二源漏极层(5),第二源漏极层(5)上形成PIN结(6),PIN结(6)上形成ITO盖层(8)以及中间间隔层(7)。
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