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1. WO2020140783 - TEST SUBSTRATE AND MANUFACTURING METHOD THEREFOR, TEST METHOD, AND DISPLAY SUBSTRATE

Publication Number WO/2020/140783
Publication Date 09.07.2020
International Application No. PCT/CN2019/127421
International Filing Date 23.12.2019
IPC
H01L 21/66 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66Testing or measuring during manufacture or treatment
H01L 21/77 2017.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
H01L 27/12 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
H01L 27/32 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
G02F 1/1362 2006.1
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
CPC
G02F 1/136254
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
136254Checking; Testing
G02F 1/1368
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
1368in which the switching element is a three-electrode device
G09G 3/006
GPHYSICS
09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
3Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
006Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
G09G 3/3233
GPHYSICS
09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
3Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
20for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix ; no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
22using controlled light sources
30using electroluminescent panels
32semiconductive, e.g. using light-emitting diodes [LED]
3208organic, e.g. using organic light-emitting diodes [OLED]
3225using an active matrix
3233with pixel circuitry controlling the current through the light-emitting element
H01L 27/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
H01L 27/3262
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
3241Matrix-type displays
3244Active matrix displays
326special geometry or disposition of pixel-elements
3262of TFT
Applicants
  • 京东方科技集团股份有限公司 BOE TECHNOLOGY GROUP CO., LTD. [CN]/[CN]
  • 成都京东方光电科技有限公司 CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 范磊 FAN, Lei
  • 包征 BAO, Zheng
Agents
  • 北京中博世达专利商标代理有限公司 BEIJING ZBSD PATENT&TRADEMARK AGENT LTD.
Priority Data
201910005365.603.01.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) TEST SUBSTRATE AND MANUFACTURING METHOD THEREFOR, TEST METHOD, AND DISPLAY SUBSTRATE
(FR) SUBSTRAT DE TEST ET SON PROCÉDÉ DE FABRICATION, PROCÉDÉ DE TEST ET SUBSTRAT D'AFFICHAGE
(ZH) 测试基板及其制作方法、测试方法、显示基板
Abstract
(EN)
A test substrate, comprising: a base substrate and multiple thin film transistors provided on a first side of the base substrate. At least one of the multiple thin film transistors is a target thin film transistor to be tested. The test substrate has at least one test area, and each target thin film transistor is located in one of the at least one test area. The test substrate further comprises at least one test hole and at least one test pin which are located in the test area. The bottom of each of the at least one test hole exposes the source area, drain area, or gate of the target thin film transistor. Each of the at least one test pin is located in one of the at least one test hole; and one end of the test pin passes through the test hole to be coupled to the source area, drain area, or gate of the target thin film transistor, and the other end of the test pin is exposed to the surface of the test substrate.
(FR)
L'invention concerne un substrat de test, comprenant : un substrat de base et de multiples transistors à couches minces disposés sur un premier côté du substrat de base. Au moins l'un des multiples transistors à couches minces est un transistor à couches minces cible à tester. Le substrat de test a au moins une zone de test, et chaque transistor à couches minces cible est situé dans l'une de l'au moins une zone de test. Le substrat de test comprend en outre au moins un trou de test et au moins une broche de test qui sont situés dans la zone de test. Le fond de chacun de l'au moins un trou de test expose la zone de source, la zone de drain ou la grille du transistor à couches minces cible. Chacune de l'au moins une broche de test est située dans l'un des au moins un trou de test ; et une extrémité de la broche de test passe à travers le trou de test pour être couplée à la zone de source, la zone de drain, ou la grille du transistor à couches minces cible, et l'autre extrémité de la broche de test est exposée à la surface du substrat de test.
(ZH)
一种测试基板,包括:衬底基板和设置于衬底基板的第一侧的多个薄膜晶体管。多个薄膜晶体管中的至少一个薄膜晶体管为待测试的目标薄膜晶体管。其中,测试基板具有至少一个测试区,每个目标薄膜晶体管位于至少一个测试区中的一个测试区内。测试基板还包括:位于测试区内的至少一个测试孔和至少一个测试管脚,至少一个测试孔中的每个测试孔的底部暴露出目标薄膜晶体管的源极区、漏极区或栅极。至少一个测试管脚中的每个测试管脚位于至少一个测试孔中的一个测试孔内,且测试管脚的一端穿过测试孔与目标薄膜晶体管的源极区、漏极区或栅极耦接,另一端暴露于测试基板的表面。
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Latest bibliographic data on file with the International Bureau