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1. WO2020140757 - SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SAME, AND POWER GENERATION DEVICE

Publication Number WO/2020/140757
Publication Date 09.07.2020
International Application No. PCT/CN2019/126264
International Filing Date 18.12.2019
IPC
H01L 27/30 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
30with components specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 27/142 2014.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
142Energy conversion devices
H01M 10/058 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
10Secondary cells; Manufacture thereof
05Accumulators with non-aqueous electrolyte
058Construction or manufacture
CPC
H01L 27/142
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
142Energy conversion devices
H01L 27/30
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
30with components specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01M 10/058
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
10Secondary cells; Manufacture thereof
05Accumulators with non-aqueous electrolyte
058Construction or manufacture
H01M 10/0585
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
10Secondary cells; Manufacture thereof
05Accumulators with non-aqueous electrolyte
058Construction or manufacture
0585of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
H01M 2220/30
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
2220Batteries for particular applications
30Batteries in portable systems, e.g. mobile phone, laptop
H02J 7/32
HELECTRICITY
02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
JCIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
7Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
32for charging batteries from a charging set comprising a non-electric prime mover ; rotating at constant speed
Applicants
  • 京东方科技集团股份有限公司 BOE TECHNOLOGY GROUP CO., LTD. [CN]/[CN]
Inventors
  • 王志东 WANG, Zhidong
  • 周丽佳 ZHOU, Lijia
  • 周全国 ZHOU, Quanguo
  • 兰荣华 LAN, Ronghua
Agents
  • 中国国际贸易促进委员会专利商标事务所 CCPIT PATENT AND TRADEMARK LAW OFFICE
Priority Data
201910001406.402.01.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SAME, AND POWER GENERATION DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR, SON PROCÉDÉ DE FABRICATION ET DISPOSITIF DE GÉNÉRATION DE PUISSANCE
(ZH) 半导体装置及其制造方法、发电装置
Abstract
(EN)
A semiconductor device, a manufacturing method for the same, and a power generation device, pertaining to the technical field of semiconductors. The semiconductor device comprises a substrate (10) and a thin film battery disposed on the substrate (10). The thin film battery comprises at least one anode structure (11), at least one cathode structure (12), and a solid electrolyte layer (13) separating the at least one anode structure (11) from the at least one cathode structure (12). Each anode structure (11) comprises an anode current collector (111) deposed on a surface of the substrate (10) and an anode layer (112) disposed on the surface of the substrate (10) and connected to a side surface of the anode current collector (111). Each cathode structure (12) comprises a cathode current collector (121) on the surface of the substrate (10) and a cathode layer (122) on the surface of the substrate (10) and connected to a side surface of the cathode current collector (121). The device reduces the likelihoood of breakage of metal wires between the cathode current collector (121) or the anode current collector (111) of the thin film battery and structural layers of other devices.
(FR)
L'invention concerne un dispositif à semi-conducteur, son procédé de fabrication, et un dispositif de génération de puissance, se rapportant au domaine technique des semi-conducteurs. Le dispositif à semi-conducteur comprend un substrat (10) et une batterie à couche mince disposée sur le substrat (10). La batterie à couche mince comprend au moins une structure d'anode (11), au moins une structure de cathode (12), et une couche d'électrolyte solide (13) séparant l'au moins une structure d'anode (11) de l'au moins une structure de cathode (12). Chaque structure d'anode (11) comprend un collecteur de courant d'anode (111) disposé sur une surface du substrat (10) et une couche d'anode (112) disposée sur la surface du substrat (10) et reliée à une surface latérale du collecteur de courant d'anode (111). Chaque structure de cathode (12) comprend un collecteur de courant de cathode (121) sur la surface du substrat (10) et une couche de cathode (122) sur la surface du substrat (10) et reliée à une surface latérale du collecteur de courant de cathode (121). Le dispositif réduit la probabilité de rupture de fils métalliques entre le collecteur de courant de cathode (121) ou le collecteur de courant d'anode (111) de la batterie à couche mince et les couches structurales d'autres dispositifs.
(ZH)
一种半导体装置及其制造方法、发电装置,涉及半导体技术领域。该半导体装置包括衬底(10)和在该衬底(10)上的薄膜电池。该薄膜电池包括在衬底(10)上的至少一个阳极结构(11)、至少一个阴极结构(12)和将该至少一个阳极结构(11)与该至少一个阴极结构(12)间隔开的固态电解质层(13)。每个阳极结构(11)包括在衬底(10)的表面上的阳极集流体(111)和在该衬底(10)的表面上且与该阳极集流体(111)的侧面连接的阳极层(112)。每个阴极结构(12)包括在该衬底(10)的表面上的阴极集流体(121)和在该衬底(10)的表面上且与该阴极集流体(121)的侧面连接的阴极层(122)。该装置可以减小薄膜电池的阴极集流体(121)或阳极集流体(111)与其他器件的结构层之间的金属连线发生断裂的可能性。
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