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1. WO2020140714 - ARRAY SUBSTRATE AND MICRO TOTAL ANALYSIS APPARATUS

Publication Number WO/2020/140714
Publication Date 09.07.2020
International Application No. PCT/CN2019/124688
International Filing Date 11.12.2019
IPC
H01L 27/12 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
G01N 21/27 2006.1
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
17Systems in which incident light is modified in accordance with the properties of the material investigated
25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
27using photo-electric detection
CPC
G01N 21/255
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
17Systems in which incident light is modified in accordance with the properties of the material investigated
25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
255Details, e.g. use of specially adapted sources, lighting or optical systems
G01N 21/27
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
17Systems in which incident light is modified in accordance with the properties of the material investigated
25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
27using photo-electric detection
H01L 27/1222
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1222with a particular composition, shape or crystalline structure of the active layer
H01L 27/124
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
124with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Applicants
  • 京东方科技集团股份有限公司 BOE TECHNOLOGY GROUP CO., LTD. [CN]/[CN]
Inventors
  • 刘英明 LIU, Yingming
  • 董学 DONG, Xue
  • 王海生 WANG, Haisheng
  • 陈小川 CHEN, Xiaochuan
  • 丁小梁 DING, Xiaoliang
  • 王雷 WANG, Lei
  • 李昌峰 LI, Changfeng
  • 顾品超 GU, Pinchao
  • 张平 ZHANG, Ping
  • 曹学友 CAO, Xueyou
Agents
  • 北京同达信恒知识产权代理有限公司 TDIP & PARTNERS
Priority Data
201910002555.202.01.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) ARRAY SUBSTRATE AND MICRO TOTAL ANALYSIS APPARATUS
(FR) SUBSTRAT MATRICIEL ET APPAREIL D'ANALYSE MICRO-TOTALE
(ZH) 阵列基板及微全分析装置
Abstract
(EN)
Disclosed are an array substrate and a micro total analysis apparatus. The array substrate comprises: a substrate, a plurality of pixel regions, which are defined by data lines (S) and gate lines (G) in an intersecting manner, on the substrate, and drive transistors located in the pixel regions. The drive transistors comprise an active layer pattern (2), wherein an extension direction of the active layer pattern (2) and the gate line (G) form a first preset angle therebetween, and in the direction of the first preset angle, the active layer pattern (2) is obliquely across the pixel region; and source and drain electrodes of the drive transistors are coupled with the active layer pattern (2) in the direction of the first preset angle. Compared with the manner of arranging the extension direction of the active layer pattern (2) and the gate line (G) in parallel, the manner of arranging the extension direction of the active layer pattern (2) and the gate line to form the first preset angle therebetween can increase the length of the active layer pattern (2) in the extension direction, i.e. increase the length-width ratio of the active layer pattern (2), while the area of the pixel region occupied is not increased, thereby facilitating the realization of high-pixel design while improving the conduction characteristic of the drive transistor.
(FR)
La présente invention porte sur un substrat matriciel et un appareil d'analyse micro-totale. Le substrat matriciel comprend : un substrat, une pluralité de régions de pixels, qui sont définies par des lignes de données (S) et des lignes de grille (G) d'une manière croisée, sur le substrat, et des transistors d'attaque situés dans les régions de pixels. Les transistors d'attaque comprennent un motif de couche active (2), une direction d'extension du motif de couche active (2) et la ligne de grille (G) formant un premier angle prédéfini entre celles-ci, et dans la direction du premier angle prédéfini, le motif de couche active (2) est oblique à travers la région de pixels ; et des électrodes de source et de drain des transistors d'attaque sont couplées au motif de couche active (2) dans la direction du premier angle prédéfini. Par comparaison avec la manière d'agencer la direction d'extension du motif de couche active (2) et la ligne de grille (G) en parallèle, la manière d'agencer la direction d'extension du motif de couche active (2) et la ligne de grille pour former le premier angle prédéfini entre celles-ci peut augmenter la longueur du motif de couche active (2) dans la direction d'extension, c'est-à-dire augmenter le rapport longueur-largeur du motif de couche active (2), tandis que la zone de la région de pixels occupée n'est pas augmentée, ce qui facilite la réalisation d'une conception de nombre de pixels élevé tout en améliorant la caractéristique de conduction du transistor d'attaque.
(ZH)
一种阵列基板及微全分析装置,该阵列基板包括:基板,位于基板上由数据线(S)和栅线(G)交叉限定的多个像素区域,以及位于像素区域内的驱动晶体管;驱动晶体管包括有源层图形(2),有源层图形(2)的延伸方向与栅线(G)呈第一预设角度,且在第一预设角度方向上有源层图形(2)斜跨像素区域;驱动晶体管的源漏电极在第一预设角度方向上与有源层图形(2)耦接。通过将有源层图形(2)的延伸方向与栅线(G)呈第一预设角度进行设置,相比于将有源层的延伸方向与栅线(2)平行设置可以增加有源层图形(2)在延伸方向的长度,即增加了有源层图形(2)的长宽比,并且占用像素区域的面积并未增大,从而实现在增加驱动晶体管的导通特性的同时有利于实现高像素设计。
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