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1. WO2020140701 - EPITAXIAL WAFER AND SEMICONDUCTOR LASER

Publication Number WO/2020/140701
Publication Date 09.07.2020
International Application No. PCT/CN2019/124469
International Filing Date 11.12.2019
IPC
H01S 5/343 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers , multiple quantum well lasers or graded index separate confinement heterostructure lasers
343in AIIIBV compounds, e.g. AlGaAs-laser
H01S 5/34 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers , multiple quantum well lasers or graded index separate confinement heterostructure lasers
CPC
H01S 5/34
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers]
H01S 5/343
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers]
343in AIIIBV compounds, e.g. AlGaAs-laser ; , InP-based laser
H01S 5/34326
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers]
343in AIIIBV compounds, e.g. AlGaAs-laser ; , InP-based laser
34326with a well layer based on InGa(Al)P, e.g. red laser
H01S 5/34346
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers]
343in AIIIBV compounds, e.g. AlGaAs-laser ; , InP-based laser
34346characterised by the materials of the barrier layers
Applicants
  • 深圳市中光工业技术研究院 SHENZHEN LASER INSTITUTE [CN]/[CN]
Inventors
  • 陈长安 CHEN, Changan
  • 郑兆祯 ZHEN, Zhaozhen
Priority Data
201910009078.204.01.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) EPITAXIAL WAFER AND SEMICONDUCTOR LASER
(FR) TRANCHE ÉPITAXIALE ET LASER À SEMI-CONDUCTEUR
(ZH) 外延晶片以及半导体激光器
Abstract
(EN)
An epitaxial wafer and a semiconductor laser, relating to the technical field of semiconductors. The epitaxial wafer comprises: a substrate (1); a functional layer (2), the functional layer (2) being located on the substrate (1), and at least part of the functional layer (2) being doped with Mg; and a light-emitting layer (3), the light-emitting layer (3) being located in the functional layer (2), and the functional layer (2) being used for driving the light-emitting layer (3) to emit light. The characteristic temperature of the laser using the epitaxial wafer can be increased, thereby further improving the electro-optic conversion efficiency.
(FR)
L'invention concerne une tranche épitaxiale et un laser à semi-conducteur, se rapportant au domaine technique des semi-conducteurs. La tranche épitaxiale comprend : un substrat (1) ; une couche fonctionnelle (2), la couche fonctionnelle (2) étant située sur le substrat (1), et au moins une partie de la couche fonctionnelle (2) étant dopée par Mg ; et une couche électroluminescente (3), la couche électroluminescente (3) étant située dans la couche fonctionnelle (2), et la couche fonctionnelle (2) étant utilisée pour amener la couche électroluminescente (3) à émettre de la lumière. La température caractéristique du laser utilisant la tranche épitaxiale peut être augmentée, ce qui permet d'améliorer encore l'efficacité de conversion électro-optique.
(ZH)
一种外延晶片以及半导体激光器,涉及半导体技术领域。外延晶片包括:衬底(1);功能层(2),功能层(2)位于衬底(1)上;其中,功能层(2)中的至少部分层体掺杂有Mg;发光层(3),发光层(3)位于功能层(2)中,功能层(2)用于驱动发光层(3)发光。能够提高应用外延晶片的激光器的特征温度,进而提高其电光转换效率。
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