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1. WO2020140561 - MICROFLUIDIC SUBSTRATE AND MANUFACTURING METHOD THEREFOR, AND MICROFLUIDIC PANEL

Publication Number WO/2020/140561
Publication Date 09.07.2020
International Application No. PCT/CN2019/112490
International Filing Date 22.10.2019
IPC
B01L 3/00 2006.1
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
LCHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
3Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
H01L 27/12 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
H01L 21/77 2017.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
CPC
B01L 3/00
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
LCHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
3Containers or dishes for laboratory use, e.g. laboratory glassware
H01L 21/77
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
H01L 21/84
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
84the substrate being other than a semiconductor body, e.g. being an insulating body
H01L 27/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
Applicants
  • 京东方科技集团股份有限公司 BOE TECHNOLOGY GROUP CO., LTD. [CN]/[CN]
Inventors
  • 李海旭 LI, Haixu
Agents
  • 北京市柳沈律师事务所 LIU, SHEN & ASSOCIATES
Priority Data
201910002439.002.01.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) MICROFLUIDIC SUBSTRATE AND MANUFACTURING METHOD THEREFOR, AND MICROFLUIDIC PANEL
(FR) SUBSTRAT MICROFLUIDIQUE ET SON PROCÉDÉ DE FABRICATION, ET PANNEAU MICROFLUIDIQUE
(ZH) 微流控基板及其制备方法、微流控面板
Abstract
(EN)
A microfluidic substrate (100, 300) and a manufacturing method therefor, and a microfluidic panel. The microfluidic substrate (100, 300) comprises a base substrate (10, 30), an acoustic wave producing device (11, 31), and a first switching element (13, 33). The acoustic wave producing device (11, 31) is provided on the base substrate (10, 30), and is configured to emit acoustic waves to drive droplets to move on the microfluidic substrate (100, 300); the acoustic wave producing device (11, 31) comprise an acoustic wave driving electrode and an acoustic wave producing layer (111, 311); the first switching element (13, 33) is provided on the base substrate (10, 30), and the first switching element (13, 33) is electrically connected to the acoustic wave driving electrode and is configured to transmit an acoustic wave driving signal to the acoustic wave driving electrode; the acoustic wave driving electrode is configured to drive the acoustic wave producing layer (111, 311) to produce the acoustic waves under the control of the acoustic wave driving signal.
(FR)
L'invention concerne un substrat microfluidique (100, 300) et son procédé de fabrication, et un panneau microfluidique. Le substrat microfluidique (100, 300) comprend un substrat de base (10, 30), un dispositif de production d'ondes acoustiques (11, 31), et un premier élément de commutation (13, 33). Le dispositif de production d'ondes acoustiques (11, 31) est disposé sur le substrat de base (10, 30), et est configuré pour émettre des ondes acoustiques pour entraîner des gouttelettes à se déplacer sur le substrat microfluidique (100, 300); le dispositif de production d'ondes acoustiques (11, 31) comprend une électrode d'attaque d'ondes acoustiques et une couche de production d'ondes acoustiques (111, 311); le premier élément de commutation (13, 33) est disposé sur le substrat de base (10, 30), et le premier élément de commutation (13, 33) est électriquement connecté à l'électrode d'attaque d'onde acoustique et est configuré pour transmettre un signal d'attaque d'onde acoustique à l'électrode d'attaque d'onde acoustique; l'électrode d'attaque d'ondes acoustiques est configurée pour entraîner la couche de production d'ondes acoustiques (111, 311) pour produire les ondes acoustiques sous la commande du signal d'attaque d'ondes acoustiques.
(ZH)
一种微流控基板(100、300)及其制备方法、微流控面板。微流控基板(100、300)包括衬底基板(10、30)、声波发生器件(11、31)和第一开关元件(13、33)。声波发生器件(11、31)设置在衬底基板(10、30)上,且被配置为发出声波以驱动液滴在微流控基板(100、300)上移动,声波发生器件(11、31)包括声波驱动电极和声波发生层(111、311),第一开关元件(13、33)设置在衬底基板(10、30)上,且第一开关元件(13、33)与声波驱动电极电连接,且被配置为将声波驱动信号传输至声波驱动电极,声波驱动电极被配置为在声波驱动信号的控制下驱动声波发生层(111、311)产生声波。
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Latest bibliographic data on file with the International Bureau