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1. WO2020140375 - ARRAY SUBSTRATE, DISPLAY DEVICE, AND FABRICATING METHOD THEREOF

Publication Number WO/2020/140375
Publication Date 09.07.2020
International Application No. PCT/CN2019/089020
International Filing Date 29.05.2019
IPC
H01L 23/60 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
58Structural electrical arrangements for semiconductor devices not otherwise provided for
60Protection against electrostatic charges or discharges, e.g. Faraday shields
CPC
G02F 1/136204
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
136204Arrangements to prevent high voltage or static electricity failures
G02F 1/1368
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
1368in which the switching element is a three-electrode device
H01L 23/60
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
58Structural electrical arrangements for semiconductor devices not otherwise provided for ; , e.g. in combination with batteries
60Protection against electrostatic charges or discharges, e.g. Faraday shields
H01L 27/0266
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
0203Particular design considerations for integrated circuits
0248for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
0251for MOS devices
0266using field effect transistors as protective elements
H01L 27/1222
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1222with a particular composition, shape or crystalline structure of the active layer
Applicants
  • BOE TECHNOLOGY GROUP CO., LTD. [CN]/[CN]
  • HEFEI BOE DISPLAY TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • WU, Zhonghou
  • DAI, Ke
  • JIANG, Peng
  • ZHANG, Chunxu
  • ZHANG, Yuntian
  • DENG, Yafei
Agents
  • TEE&HOWE INTELLECTUAL PROPERTY ATTORNEYS
Priority Data
201910001869.002.01.2019CN
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) ARRAY SUBSTRATE, DISPLAY DEVICE, AND FABRICATING METHOD THEREOF
(FR) SUBSTRAT DE RÉSEAU, DISPOSITIF D’AFFICHAGE ET PROCÉDÉ DE FABRICATION ASSOCIÉ
Abstract
(EN)
An array substrate is disclosed, the array substrate including: a pixel display transistor having a first source, a first drain, and a first channel region, the first channel region having a first channel length extending between the first source and the first drain; an antistatic transistor having a second source, a second drain, and a second channel region; and a conductive block in the second channel region between the second source and the second drain; wherein the first channel region and second channel region are patterned regions of a same semiconductor material layer; and the conductive block divides the second channel region into a first sub-channel and a second sub-channel.
(FR)
L'invention concerne un substrat de réseau, le substrat de réseau comprenant : un transistor d'affichage de pixels ayant une première source, un premier drain et une première région de canal, la première région de canal ayant une première longueur de canal s'étendant entre la première source et le premier drain ; un transistor antistatique ayant une seconde source, un second drain et une seconde région de canal ; et un bloc conducteur dans la seconde région de canal entre la seconde source et le second drain ; la première région de canal et la seconde région de canal étant des régions à motifs d'une même couche de matériau semi-conducteur ; et le bloc conducteur divise la seconde région de canal en un premier sous-canal et un second sous-canal.
Also published as
Latest bibliographic data on file with the International Bureau