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1. WO2020140357 - THIN FILM TRANSISTOR, METHOD OF FABRICATING THIN FILM TRANSISTOR, AND DISPLAY APPARATUS HAVING THIN FILM TRANSISTOR

Publication Number WO/2020/140357
Publication Date 09.07.2020
International Application No. PCT/CN2019/085561
International Filing Date 05.05.2019
IPC
H01L 29/786 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
H01L 21/336 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
CPC
H01L 29/6675
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66742Thin film unipolar transistors
6675Amorphous silicon or polysilicon transistors
H01L 29/78648
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
78645with multiple gate
78648arranged on opposing sides of the channel
H01L 29/78696
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
78696characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Applicants
  • BOE TECHNOLOGY GROUP CO., LTD. [CN]/[CN]
  • CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • ZHANG, Shun
  • CHENG, Bo
  • ZHANG, Kai
Agents
  • TEE & HOWE INTELLECTUAL PROPERTY ATTORNEYS
Priority Data
201910001678.402.01.2019CN
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) THIN FILM TRANSISTOR, METHOD OF FABRICATING THIN FILM TRANSISTOR, AND DISPLAY APPARATUS HAVING THIN FILM TRANSISTOR
(FR) TRANSISTOR À COUCHES MINCES, PROCÉDÉ DE FABRICATION DE TRANSISTOR À COUCHES MINCES, ET APPAREIL D'AFFICHAGE AYANT UN TRANSISTOR À COUCHES MINCES
Abstract
(EN)
A thin film transistor is provided. The thin film transistor includes a base substrate; a first target layer on the base substrate; a first insulating layer on a side of the first target layer away from the base substrate; an intermediate layer on a side of the first insulating layer away from the first target layer; a second insulating layer on a side of the intermediate layer away from the first insulating layer; and a second target layer on a side of the second insulating layer away from the intermediate layer. The first target layer is electrically connected to the second target layer. The intermediate layer is one of a gate electrode and an active layer, and the first target layer and the second target layer together constitute another one of the gate electrode and the active layer.
(FR)
La présente invention porte sur un transistor à couches minces. Le transistor à couches minces comprend un substrat de base ; une première couche cible sur le substrat de base ; une première couche isolante sur un côté de la première couche cible à l'opposé du substrat de base ; une couche intermédiaire sur un côté de la première couche isolante à l'opposé de la première couche cible ; une seconde couche isolante sur un côté de la couche intermédiaire à l'opposé de la première couche isolante ; et une seconde couche cible sur un côté de la seconde couche isolante à l'opposé de la couche intermédiaire. La première couche cible est électriquement connectée à la seconde couche cible. La couche intermédiaire est l'une parmi une électrode de grille et une couche active, et la première couche cible et la seconde couche cible constituent ensemble une autre parmi l'électrode de grille et la couche active.
Also published as
Latest bibliographic data on file with the International Bureau