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1. WO2020140228 - DISPLAY BACKBOARD AND MANUFACTURING METHOD THEREFOR, DISPLAY PANEL, AND DISPLAY DEVICE

Publication Number WO/2020/140228
Publication Date 09.07.2020
International Application No. PCT/CN2019/070236
International Filing Date 03.01.2019
IPC
H01L 27/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
CPC
H01L 21/02565
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02565Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
H01L 21/02568
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02568Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
H01L 2227/323
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2227Indexing scheme for devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate covered by group H01L27/00
32Devices including an organic light emitting device [OLED], e.g. OLED display
323Multistep processes for AMOLED
H01L 27/1225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1222with a particular composition, shape or crystalline structure of the active layer
1225with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
H01L 27/1237
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1237with a different composition, shape, layout or thickness of the gate insulator in different devices
H01L 27/1259
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1259Multistep manufacturing methods
Applicants
  • 京东方科技集团股份有限公司 BOE TECHNOLOGY GROUP CO., LTD. [CN]/[CN]
Inventors
  • 牛亚男 NIU, Yanan
  • 王久石 WANG, Jiushi
  • 陈蕾 CHEN, Lei
  • 田宏伟 TIAN, Hongwei
  • 曹占锋 CAO, Zhanfeng
  • 关峰 GUAN, Feng
  • 张锋 ZHANG, Feng
  • 舒适 SHU, Shi
  • 彭宽军 PENG, Kuanjun
  • 张宜驰 ZHANG, Yichi
  • 齐琪 QI, Qi
Agents
  • 中国国际贸易促进委员会专利商标事务所 CCPIT PATENT AND TRADEMARK LAW OFFICE
Priority Data
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) DISPLAY BACKBOARD AND MANUFACTURING METHOD THEREFOR, DISPLAY PANEL, AND DISPLAY DEVICE
(FR) PANNEAU ARRIÈRE D'AFFICHAGE ET SON PROCÉDÉ DE FABRICATION, PANNEAU D'AFFICHAGE ET DISPOSITIF D'AFFICHAGE
(ZH) 显示背板及其制造方法、显示面板和显示装置
Abstract
(EN)
Disclosed are a display backboard and a manufacturing method therefor, a display panel, and a display device. The display backboard comprises: a substrate (101); and a first thin film transistor (102) and a second thin film transistor (103) provided at one side of the substrate (101), wherein the the first thin film transistor (102) comprises a first active layer (112), the second thin film transistor (103) comprises a second active layer (113), the first active layer (112) and the second active layer (113) are located in the same layer, and the material of the first active layer (112) is different from the material of the second active layer (113).
(FR)
L’invention porte sur un panneau arrière d'affichage et sur son procédé de fabrication, sur un panneau d'affichage et sur un dispositif d'affichage. Le panneau arrière d'affichage comprend : un substrat (101) ; et un premier transistor à couches minces (102) et un second transistor à couches minces (103) disposés sur un côté du substrat (101), le premier transistor à couches minces (102) comprenant une première couche active (112), le second transistor à couches minces (103) comprend une seconde couche active (113), la première couche active (112) et la seconde couche active (113) sont situées dans la même couche, et le matériau de la première couche active (112) est différent du matériau de la seconde couche active (113).
(ZH)
一种显示背板及其制造方法、显示面板和显示装置。显示背板包括:基板(101);位于基板(101)一侧的第一薄膜晶体管(102)和第二薄膜晶体管(103),其中:第一薄膜晶体管(102)包括第一有源层(112),第二薄膜晶体管(103)包括第二有源层(113),第一有源层(112)和第二有源层(113)位于同一层,并且第一有源层(112)的材料与第二有源层(113)的材料不同。
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