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1. WO2020140212 - PLASMA ACTIVATION TREATMENT FOR WAFER BONDING

Publication Number WO/2020/140212
Publication Date 09.07.2020
International Application No. PCT/CN2019/070143
International Filing Date 02.01.2019
IPC
H01L 21/60 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 21/50 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
CPC
H01L 2224/05624
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
05of an individual bonding area
0554External layer
05599Material
056with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
05617the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
05624Aluminium [Al] as principal constituent
H01L 2224/05647
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
05of an individual bonding area
0554External layer
05599Material
056with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
05638the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
05647Copper [Cu] as principal constituent
H01L 2224/05657
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
05of an individual bonding area
0554External layer
05599Material
056with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
05638the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
05657Cobalt [Co] as principal constituent
H01L 2224/05684
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
05of an individual bonding area
0554External layer
05599Material
056with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
05663the principal constituent melting at a temperature of greater than 1550°C
05684Tungsten [W] as principal constituent
H01L 2224/05686
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
05of an individual bonding area
0554External layer
05599Material
05686with a principal constituent of the material being a non metallic, non metalloid inorganic material
H01L 2224/08058
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
07Structure, shape, material or disposition of the bonding areas after the connecting process
08of an individual bonding area
0805Shape
08057in side view
08058being non uniform along the bonding area
Applicants
  • YANGTZE MEMORY TECHNOLOGIES CO., LTD. [CN]/[CN]
Inventors
  • LIU, Mengyong
  • DING, Tao Tao
  • LIU, Wu
  • XING, Rui Yuan
  • CHEN, Guoliang
Agents
  • NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD.
Priority Data
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) PLASMA ACTIVATION TREATMENT FOR WAFER BONDING
(FR) TRAITEMENT D'ACTIVATION PAR PLASMA POUR LIAISON DE PLAQUETTE
Abstract
(EN)
Wafer bonding methods (400) comprise: a first plasma activation treatment based on oxygen or an inert gas is performed on a front surface of a first wafer (202) and a front surface of a second wafer (204) (402). After the first plasma activation treatment, a second plasma activation treatment based on water molecules is performed on the front surface of the first wafer (202) and the front surface of the second wafer (204) (404). After the second plasma activation treatment, the first wafer (202) and the second wafer (204) are bonded such that the treated front surface of the first wafer (202) is in physical contact with the treated front surface of the second wafer (204) (408).
(FR)
Procédés de liaison de plaquette (400) comprennent : un premier traitement d'activation par plasma à base d'oxygène ou d'un gaz inerte est effectué sur une surface avant d'une première plaquette (202) et une surface avant d'une seconde plaquette (204) (402). Après le premier traitement d'activation par plasma, un second traitement d'activation par plasma basé sur des molécules d'eau est effectué sur la surface avant de la première plaquette (202) et la surface avant de la seconde plaquette (204) (404). Après le second traitement d'activation par plasma, la première plaquette (202) et la seconde plaquette (204) sont liées de telle sorte que la surface avant traitée de la première plaquette (202) est en contact physique avec la surface avant traitée de la seconde plaquette (204)(408).
Also published as
Latest bibliographic data on file with the International Bureau