Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020139957 - PLANAR SUBSTRATE AND METAL INTERFACE FOR RF, MICROWAVE AND MM WAVE SYSTEMS

Publication Number WO/2020/139957
Publication Date 02.07.2020
International Application No. PCT/US2019/068593
International Filing Date 26.12.2019
IPC
H01L 21/70 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
H01L 23/66 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
58Structural electrical arrangements for semiconductor devices not otherwise provided for
64Impedance arrangements
66High-frequency adaptations
H01L 21/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
CPC
H01L 2223/6616
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2223Details relating to semiconductor or other solid state devices covered by the group H01L23/00
58Structural electrical arrangements for semiconductor devices not otherwise provided for
64Impedance arrangements
66High-frequency adaptations
6605High-frequency electrical connections
6616Vertical connections, e.g. vias
H01L 2223/6655
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2223Details relating to semiconductor or other solid state devices covered by the group H01L23/00
58Structural electrical arrangements for semiconductor devices not otherwise provided for
64Impedance arrangements
66High-frequency adaptations
6644Packaging aspects of high-frequency amplifiers
6655Matching arrangements, e.g. arrangement of inductive and capacitive components
H01L 2223/6677
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2223Details relating to semiconductor or other solid state devices covered by the group H01L23/00
58Structural electrical arrangements for semiconductor devices not otherwise provided for
64Impedance arrangements
66High-frequency adaptations
6661for passive devices
6677for antenna, e.g. antenna included within housing of semiconductor device
H01L 2223/6683
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2223Details relating to semiconductor or other solid state devices covered by the group H01L23/00
58Structural electrical arrangements for semiconductor devices not otherwise provided for
64Impedance arrangements
66High-frequency adaptations
6683for monolithic microwave integrated circuit [MMIC]
H01L 23/66
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
58Structural electrical arrangements for semiconductor devices not otherwise provided for ; , e.g. in combination with batteries
64Impedance arrangements
66High-frequency adaptations
H01L 2924/30111
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
30Technical effects
301Electrical effects
3011Impedance
30111matching
Applicants
  • 3D GLASS SOLUTIONS, INC. [US]/[US]
Inventors
  • FLEMMING, Jeb, H.
  • BULLINGTON, Jeff
Agents
  • FLORES, Edwin, S.
  • CHALKER, Daniel, J.
  • CHALKER FLORES, LLP
Priority Data
62/786,18428.12.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) PLANAR SUBSTRATE AND METAL INTERFACE FOR RF, MICROWAVE AND MM WAVE SYSTEMS
(FR) SUBSTRAT PLANAR ET INTERFACE MÉTALLIQUE DESTINÉS À DES SYSTÈMES RF, HYPERFRÉQUENCES ET EHF
Abstract
(EN)
The present invention includes a method of making a device that eliminates a vertical transition from a substrate to a metal structure comprising: providing a lapped and polished substrate with at least one metal trench or via in the substrate having a transition between a surface of the substrate and a surface of the metal; coating or depositing on the substrate the same metal as the metal in the trench or via, wherein a thickness of the coated or deposited metal is at least twice the thickness of the transition; chemically-mechanically polishing at least 50% of the thickness of the coated or deposited metal; and using an etching process to etch the deposited material on the surface of to eliminate the vertical transition from the surface of the substrate to the metal trench or via.
(FR)
La présente invention concerne un procédé de fabrication d'un dispositif qui élimine une transition verticale d'un substrat à une structure métallique, consistant : à fournir un substrat rodé et poli comprenant au moins un trou d'interconnexion ou une tranchée métallique dans le substrat ayant une transition entre une surface du substrat et une surface du métal; à revêtir ou à déposer sur le substrat le même métal que le métal dans le trou d'interconnexion ou la tranchée, une épaisseur du métal revêtu ou déposé étant au moins deux fois l'épaisseur de la transition; à polir chimico-mécaniquement au moins 50 % de l'épaisseur du métal revêtu ou déposé; et à faire appel à un procédé de gravure de façon à graver le matériau déposé sur la surface de manière à éliminer la transition verticale de la surface du substrat au trou d'interconnexion ou à la tranchée métallique.
Latest bibliographic data on file with the International Bureau