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1. WO2020139955 - ANNULAR CAPACITOR RF, MICROWAVE AND MM WAVE SYSTEMS

Publication Number WO/2020/139955
Publication Date 02.07.2020
International Application No. PCT/US2019/068590
International Filing Date 26.12.2019
IPC
H01L 21/20 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 27/108 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
108Dynamic random access memory structures
H01L 49/02 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
49Solid state devices not provided for in groups H01L27/-H01L47/99; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02Thin-film or thick-film devices
CPC
H01G 4/012
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
4Fixed capacitors; Processes of their manufacture
002Details
005Electrodes
012Form of non-self-supporting electrodes
H01G 4/248
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
4Fixed capacitors; Processes of their manufacture
002Details
228Terminals
248the terminals embracing or surrounding the capacitive element, e.g. caps
H01G 4/33
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
4Fixed capacitors; Processes of their manufacture
33Thin- or thick-film capacitors
H01G 4/40
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
4Fixed capacitors; Processes of their manufacture
40Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
H01L 23/481
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; ; Selection of materials therefor
481Internal lead connections, e.g. via connections, feedthrough structures
H01L 23/49822
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; ; Selection of materials therefor
488consisting of soldered ; or bonded; constructions
498Leads, ; i.e. metallisations or lead-frames; on insulating substrates, ; e.g. chip carriers
49822Multilayer substrates
Applicants
  • 3D GLASS SOLUTIONS, INC. [US]/[US]
Inventors
  • FLEMMING, Jeb, H.
Agents
  • CHALKER, Daniel, J.
  • FLORES, Edwin, S.
Priority Data
62/786,16528.12.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) ANNULAR CAPACITOR RF, MICROWAVE AND MM WAVE SYSTEMS
(FR) SYSTÈMES D'ONDES RF, MICRO-ONDES ET MM DE CONDENSATEUR ANNULAIRE
Abstract
(EN)
The present invention includes a method for creating an annular capacitor adjacent to via or imbedded metal structure allowing for device to be made in close proximity to the via connecting to a ground plane. The annular capacitor in close proximity to the metal filled via or imbedded metal structure allows the construction of capacitors, filters, or active devices enabling a smaller RF device and/or to shunt a signal to the integrated ground plane. This reduces the RF, Electronic noise and results in a reduced device size.
(FR)
La présente invention comprend un procédé de création d'un condensateur annulaire adjacent à un trou d'interconnexion ou une structure métallique intégrée permettant de réaliser le dispositif à proximité immédiate du trou d'interconnexion par connexion à un retour de masse. Le condensateur annulaire à proximité immédiate du trou d'interconnexion rempli de métal ou de la structure métallique intégrée permet la construction de condensateurs, de filtres ou de dispositifs actifs permettant à un dispositif RF plus petit et/ou de dériver un signal vers le retour de masse intégré. Ceci permet de réduire le bruit électronique RF et d'obtenir une taille de dispositif réduite.
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