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1. WO2020139951 - HETEROGENOUS INTEGRATION FOR RF, MICROWAVE AND MM WAVE SYSTEMS IN PHOTOACTIVE GLASS SUBSTRATES

Publication Number WO/2020/139951
Publication Date 02.07.2020
International Application No. PCT/US2019/068586
International Filing Date 26.12.2019
IPC
H01L 23/535 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
535including internal interconnections, e.g. cross-under constructions
H01L 21/027 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
H01L 23/528 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
528Layout of the interconnection structure
CPC
H01L 21/4817
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
4814Conductive parts
4817for containers, e.g. caps
H01L 21/4871
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
4814Conductive parts
4871Bases, plates or heatsinks
H01L 2223/54426
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2223Details relating to semiconductor or other solid state devices covered by the group H01L23/00
544Marks applied to semiconductor devices or parts
54426for alignment
H01L 2223/54453
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2223Details relating to semiconductor or other solid state devices covered by the group H01L23/00
544Marks applied to semiconductor devices or parts
54453for use prior to dicing
H01L 2223/6611
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2223Details relating to semiconductor or other solid state devices covered by the group H01L23/00
58Structural electrical arrangements for semiconductor devices not otherwise provided for
64Impedance arrangements
66High-frequency adaptations
6605High-frequency electrical connections
6611Wire connections
H01L 2223/6616
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2223Details relating to semiconductor or other solid state devices covered by the group H01L23/00
58Structural electrical arrangements for semiconductor devices not otherwise provided for
64Impedance arrangements
66High-frequency adaptations
6605High-frequency electrical connections
6616Vertical connections, e.g. vias
Applicants
  • 3D GLASS SOLUTIONS, INC. [US]/[US]
Inventors
  • FLEMMING, Jeb H.
  • MCWETHY, Kyle
Agents
  • CHALKER, Daniel J.
  • FLORES, Edwin, S.
  • CHALKER FLORES, LLP
Priority Data
62/786,15528.12.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) HETEROGENOUS INTEGRATION FOR RF, MICROWAVE AND MM WAVE SYSTEMS IN PHOTOACTIVE GLASS SUBSTRATES
(FR) INTÉGRATION HÉTÉROGÈNE POUR SYSTÈMES RF, HYPERFRÉQUENCES ET À ONDES MILLIMÉTRIQUES DANS DES SUBSTRATS EN VERRE PHOTOACTIF
Abstract
(EN)
The present invention includes a method for creating a system in a package with integrated lumped element devices and active devices on a single chip/substrate for heterogeneous integration system-on-chip (HiSoC) in photo-definable glass, comprising: masking a design layout comprising one or more electrical passive and active components on or in a photosensitive glass substrate; activating the photosensitive glass substrate, heating and cooling to make the crystalline material to form a glass-crystalline substrate; etching the glass- crystalline substrate; and depositing, growing, or selectively etching a seed layer on a surface of the glass-crystalline substrate on the surface of the photodefinable glass.
(FR)
La présente invention concerne un procédé de création d'un système dans un boîtier comportant des dispositifs à constantes localisées et des dispositifs actifs intégrés sur une puce/substrat unique pour un système sur puce à intégration hétérogène (HiSoC) dans un verre photodéfinissable, comprenant : le masquage d'une topologie de conception comprenant un ou plusieurs composants électriques passifs et actifs sur ou dans un substrat en verre photosensible ; l'activation du substrat en verre photosensible, le chauffage et le refroidissement pour fabriquer le matériau cristallin afin de former un substrat verre/matériau cristallin ; la gravure du substrat verre/matériau cristallin ; et le dépôt, la croissance ou la gravure sélective d'une couche de germe sur une surface du substrat verre/matériau cristallin sur la surface du verre photodéfinissable.
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