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1. WO2020139663 - PRESTON MATRIX GENERATOR

Publication Number WO/2020/139663
Publication Date 02.07.2020
International Application No. PCT/US2019/067257
International Filing Date 18.12.2019
IPC
B24B 37/005 2012.1
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
005Control means for lapping machines or devices
B24B 37/20 2012.1
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
11Lapping tools
20Lapping pads for working plane surfaces
H01L 21/67 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/306 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
CPC
B24B 37/042
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
37Lapping machines or devices; Accessories
04designed for working plane surfaces
042operating processes therefor
B24B 49/10
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
49Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
10involving electrical means
G06F 2115/10
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
FELECTRIC DIGITAL DATA PROCESSING
2115Details relating to the type of the circuit
10Processors
G06F 30/17
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
FELECTRIC DIGITAL DATA PROCESSING
30Computer-aided design [CAD]
10Geometric CAD
17Mechanical parametric or variational design
G06F 30/333
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
FELECTRIC DIGITAL DATA PROCESSING
30Computer-aided design [CAD]
30Circuit design
32Circuit design at the digital level
333Design for testability [DFT], e.g. scan chain or built-in self-test [BIST]
Applicants
  • APPLIED MATERIALS, INC. [US]/[US]
Inventors
  • DHANDAPANI, Sivakumar
  • LI, Thomas
  • QIAN, Jun
Agents
  • GOREN, David J.
Priority Data
16/554,48628.08.2019US
62/785,16526.12.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) PRESTON MATRIX GENERATOR
(FR) GÉNÉRATEUR DE MATRICE DE PRESTON
Abstract
(EN)
A method of generating a matrix to relate a plurality of controllable parameters of a chemical mechanical polishing system to a polishing rate profile includes polishing a test substrate. The test substrate is polished for a first period of time using baseline parameter values with a first parameter set to a first value, and the test substrate is polished for a second period of time using first modified parameter values with the first parameter set to a modified second value. A thickness of the test substrate is monitored during polishing, and a baseline polishing rate profile is determined for the first period of time and a first modified polishing rate profile is determined for the second period of time. The matrix is calculated based on the baseline parameter values, the first modified parameters, the baseline polishing rate profile and the first modified polishing rate profile.
(FR)
L'invention concerne un procédé de génération d'une matrice permettant d'associer une pluralité de paramètres commandables d'un système de polissage mécano-chimique à un profil de vitesse de polissage, lequel procédé comprend le polissage d'un substrat d'essai. Le substrat d'essai est poli pendant une première période à l'aide de valeurs de paramètres de référence avec un premier paramètre réglé à une première valeur, et le substrat d'essai est poli pendant une seconde période à l'aide de premières valeurs de paramètres modifiées avec le premier paramètre réglé à une seconde valeur modifiée. Une épaisseur du substrat d'essai est surveillée pendant le polissage, et un profil de vitesse de polissage de référence est déterminé pour la première période, et un premier profil de vitesse de polissage modifié est déterminé pour la seconde période. La matrice est calculée sur la base des valeurs de paramètres de référence, des premiers paramètres modifiés, du profil de vitesse de polissage de référence et du premier profil de vitesse de polissage modifié.
Also published as
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