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1. WO2020139584 - IMPROVED RESISTIVITY STABILIZATION MEASUREMENT OF FAT NECK SLABS FOR HIGH RESISTIVITY AND ULTRA-HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT GROWTH

Publication Number WO/2020/139584
Publication Date 02.07.2020
International Application No. PCT/US2019/066187
International Filing Date 13.12.2019
IPC
C30B 15/04 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
02adding crystallising materials or reactants forming it in situ to the melt
04adding doping materials, e.g. for n–p-junction
C30B 29/06 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
C30B 15/20 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
20Controlling or regulating
C30B 33/02 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
33After-treatment of single crystals or homogeneous polycrystalline material with defined structure
02Heat treatment
CPC
C30B 15/02
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
02adding crystallising materials or reactants forming it in situ to the melt
C30B 15/04
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
02adding crystallising materials or reactants forming it in situ to the melt
04adding doping materials, e.g. for n-p-junction
C30B 15/10
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
10Crucibles or containers for supporting the melt
C30B 15/14
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
14Heating of the melt or the crystallised materials
C30B 15/20
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
20Controlling or regulating
C30B 29/06
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
Applicants
  • GLOBALWAFERS CO., LTD. [CN]/[CN]
Inventors
  • LEE, HyungMin
  • RYU, JaeWoo
  • PHILLIPS, Richard J.
  • STANDLEY, Robert Wendell
  • HUDSON, Carissima Marie
Agents
  • SCHUTH, Richard A.
  • KEPPEL, Nicholas A.
  • MUNSELL, Michael G.
  • VANDER MOLEN, Michael J.
  • POLAND, Eric G.
  • BUTLER, Christopher H.
  • ALLEN, Derick E.
  • AMODIO, Lucas M.
  • ATKINS, Bruce T.
  • BLOCK, Zachary J.
  • BRENNAN, Patrick E.
  • BROPHY, Richard L.
  • COYLE, Patrick J.
  • FITZGERALD, Daniel M.
  • FLOREK, Erin M.
  • GOFF, Christopher M.
  • HARPER, James D.
  • HARPER, Jesse S.
  • HEINEN JR., James M.
  • HILMERT, Laura J.
  • LONGMEYER, Michael H.
  • MUELLER, Jacob R.
  • RASCHE, Patrick W.
  • REESER III, Robert B.
  • SNIDER, Josh C.
  • THOMAS, Mark A.
  • WULLER, Adam R.
  • ZEE-CHENG, Brendan R.
  • ZYCHLEWICZ, William J.
  • MOLLER-JACOBS, Rose L.
  • VANENGELEN, Catherine E.
  • TRUITT, Tracey S.
  • KU, Deborah S.
  • SCHNEIDERJOHN, Robert L.
  • GOLTERMAN, Robert E.
  • VANDER TUIG, Marc W.
  • RAYMOND JR., Donald D.
  • ROSS, Katherine L.
  • BEHM, JR., Edward F.
  • GNIBUS, Michael M.
  • BENNETT, Rachel
  • BEULICK, Nicholas P.
  • CARWIN, Michael W.
  • BRACCIANO, Daniel D.
  • VANENGELEN, Michael R.
  • MARTINEZ, Alexandra
  • WIERSMA, Zachary
  • BRUNNGRABER, Eric H.
  • KING, Sandra
  • WINTER, Catherine J.
  • SHARIFF, Michael A.
Priority Data
62/785,43227.12.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) IMPROVED RESISTIVITY STABILIZATION MEASUREMENT OF FAT NECK SLABS FOR HIGH RESISTIVITY AND ULTRA-HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT GROWTH
(FR) MESURE DE STABILISATION DE RÉSISTIVITÉ AMÉLIORÉE DE DALLES À GROS COL POUR CROISSANCE DE LINGOT DE SILICIUM MONOCRISTALLIN À HAUTE RÉSISTIVITÉ ET ULTRA-HAUTE RÉSISTIVITÉ
Abstract
(EN)
Methods for forming single crystal silicon ingots with improved resistivity control are disclosed. The methods involve growth of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The sample rod is cropped to form a center slab. The resistivity of the center slab may be measured directly such as by a four-point probe. The sample rod or optionally the center slab may be annealed in a thermal donor kill cycle prior to measuring the resistivity, and the annealed rod or slab is irradiated with light in order to enhance the relaxation rate and enable more rapid resistivity measurement.
(FR)
L’invention concerne des procédés de formation de lingots de silicium monocristallin présentant un meilleur contrôle de la résistivité. Les procédés impliquent la croissance d'une tige échantillon. La tige échantillon peut avoir un diamètre inférieur au diamètre du lingot de produit. La tige échantillon est rognée pour former une dalle centrale. La résistivité de la dalle centrale peut être mesurée directement, par exemple par une sonde à quatre points. La tige échantillon ou éventuellement la dalle centrale peut être recuite dans un cycle de destruction de donneur thermique avant la mesure de la résistivité, et la tige ou dalle recuite est irradiée avec de la lumière afin d'améliorer le taux de relaxation et permettre une mesure de résistivité plus rapide.
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