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1. WO2020139425 - ON-CHIP NON-VOLATILE MEMORY (NVM) SEARCH

Publication Number WO/2020/139425
Publication Date 02.07.2020
International Application No. PCT/US2019/050106
International Filing Date 06.09.2019
IPC
G06F 16/903 2019.1
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
FELECTRIC DIGITAL DATA PROCESSING
16Information retrieval; Database structures therefor; File system structures therefor
90Details of database functions independent of the retrieved data types
903Querying
G11C 16/08 2006.1
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
08Address circuits; Decoders; Word-line control circuits
G11C 16/04 2006.1
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
04using variable threshold transistors, e.g. FAMOS
G06F 3/06 2006.1
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
FELECTRIC DIGITAL DATA PROCESSING
3Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
06Digital input from, or digital output to, record carriers
CPC
G06F 9/3004
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
FELECTRIC DIGITAL DATA PROCESSING
9Arrangements for program control, e.g. control units
06using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
30Arrangements for executing machine instructions, e.g. instruction decode
30003Arrangements for executing specific machine instructions
3004to perform operations on memory
G11C 11/005
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
005comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
G11C 11/065
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
06using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element
061using elements with single aperture or magnetic loop for storage, one element per bit, and for destructive read-out
065word organised, such as 2D organisation, or linear selection, i.e. for selection of all the elements of a word by means of a single full current for reading
G11C 11/5628
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
5621using charge storage in a floating gate
5628Programming or writing circuits; Data input circuits
G11C 15/02
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
15Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
02using magnetic elements
G11C 15/046
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
15Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
04using semiconductor elements
046using non-volatile storage elements
Applicants
  • WESTERN DIGITAL TECHNOLOGIES, INC. [US]/[US]
Inventors
  • SHARON, Eran
  • MARCU, Alon
  • BENISTY, Shay
  • HAHN, Judah, Gamliel
  • ALROD, Idan
  • BAZARSKY, Alexander
  • NAVON, Ariel
  • ZAMIR, Ran
Agents
  • FITCH, Gabriel
Priority Data
16/232,63926.12.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) ON-CHIP NON-VOLATILE MEMORY (NVM) SEARCH
(FR) RECHERCHE DE MÉMOIRE NON VOLATILE (NVM) SUR PUCE
Abstract
(EN)
The disclosure relates in some aspects to on-chip processing circuitry formed within the die of a non-volatile (NVM) array to perform data searches. In some aspects, the die includes components configured to sense wordlines of stored data in the NVM array by applying voltages on the wordlines serially, and then search for an input data pattern within the serially- sensed wordlines. In some examples, the components of the die include latches and circuits configured to perform bitwise latch logic search operations. In other examples, the search components are configured with under-the-array or next-to-the-array dedicated search circuitry that uses registers and/or random access memory (RAM). Other aspects relate to a separate controller device for controlling the on-chip NVM search operations. For example, the controller may determine whether to search for data using search components of the NVM die or processors of the controller based, e.g., on a degree of fragmentation of data.
(FR)
L'invention, selon certains aspects, concerne des circuits de traitement sur puce formés à l'intérieur du dé d'un réseau mémoire non volatile (NVM) pour effectuer des recherches de données. Selon certains aspects, le dé comprend des composants conçus pour détecter des lignes de mots de données mémorisées dans le réseau NVM par application de tensions en série aux lignes de mots, et ensuite par recherche d'un schéma de données d'entrée dans les lignes de mots détectées en série. Selon certains exemples, les composants du dé comprennent des verrous et des circuits conçus pour effectuer des opérations de recherche de logique de verrouillage par bit. Selon d'autres exemples, les composants de recherche sont conçus avec des circuits de recherche dédiés sous le réseau ou proches du réseau qui font appel à des registres et/ou à une mémoire vive (RAM). D'autres aspects concernent un dispositif de commande séparé servant à commander les opérations de recherche de NVM sur puce. Par exemple, le dispositif de commande peut déterminer s'il convient de rechercher des données à l'aide de composants de recherche du dé de NVM ou des processeurs du dispositif de commande sur la base, par exemple, d'un degré de fragmentation de données.
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