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1. WO2020139131 - MXENE-MODIFIED HYBRID PHOTOCONVERTER

Publication Number WO/2020/139131
Publication Date 02.07.2020
International Application No. PCT/RU2019/000661
International Filing Date 20.09.2019
IPC
H01L 51/42 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
CPC
H01L 51/0003
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0002Deposition of organic semiconductor materials on a substrate
0003using liquid deposition, e.g. spin coating
H01L 51/4206
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation ; using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
4206Metal-organic semiconductor-metal devices
H01L 51/4213
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation ; using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
4213Comprising organic semiconductor-inorganic semiconductor hetero-junctions
H01L 51/4293
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation ; using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
4293Devices having a p-i-n structure
Y02E 10/549
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
549Organic PV cells
Applicants
  • NATIONAL UNIVERSITY OF SCIENCE AND TECHNOLOGY "MISIS" [RU]/[RU]
Inventors
  • PAZNIAK, Anna Ivanovna
  • SARANIN, Danila Sergeevich
  • MURATOV, Dmitry Sergeevich
  • GOSTISHCHEV, Pavel Andreevich
  • DIDENKO, Sergei Ivanovich
  • KUZNETSOV, Denis Valerievich
  • DI CARLO, Al'do
Agents
  • SAGITOV, Vener Ramilievich
Priority Data
201814614625.12.2018RU
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MXENE-MODIFIED HYBRID PHOTOCONVERTER
(FR) PHOTOCONVERTISSEUR HYBRIDE MODIFIÉ MXÈNE
Abstract
(EN)
This invention related to the technology of thin-film hybrid semiconductor photoconverters. Thin-film hybrid photoconverters with heterojunctions and layers modified with Тi3C2Тх MXenes for use in visible sunlight spectrum and UV - IR regions (380 to 780 nm). Device with absorber layer of metal-organic APbX3 perovskites were fabricated in n-i-p and p-i-n configurations, including structures with carbon electrodes and stabilized characteristics (Pmax under standard illumination for terrestrial application, spectrum 1.5 AM G, Рinc 100 mW/cm2) were stabilized by introduction of thin Ti3C2Tx MXene layers (5-50 nm) at the junction and contact interfaces, i.e., APbX3 perovskite absorber layer / MXene, electron transport layer / MXene, cathode electrode / MXene, as well as by doping of carbon electrode for work function reduction by incorporating of MXenes into the bulk of material with appropriate weight percentage for providing ohmic contact with higher efficiency of charge collection.
(FR)
L'invention concerne la technologie des photoconvertisseurs à semi-conducteurs hybrides à film mince. L'invention porte sur des photoconvertisseurs hybrides à film mince dotés d'hétérojonctions et de couches modifiées à l'aide de MXènes Тi3C2Тх destinés à être utilisés dans le spectre visible du soleil et les régions UV-IR (380 à 780 nm). Un dispositif à couche absorbante de pérovskites APbX3 métal-organique a été fabriqué dans des configurations n-i-p et p-i-n, des structures à électrodes de carbone et des caractéristiques stabilisées (Pmax sous éclairage standard pour application terrestre, spectre 1,5 AM G, Рinc 100 mW/cm2) ont été stabilisées par introduction de couches de MXènes minces de Ti3C2Tx (5-50 nm) au niveau des interfaces de jonction et de contact, c'est-à-dire une couche d'absorbeur de pérovskite APbX3/MXène, une couche de transport d'électrons/MXène, une électrode de cathode/MXène, ainsi que par dopage de l'électrode de carbone pour la réduction de la fonction de travail par incorporation de MXènes dans la masse de matériau avec un pourcentage de poids approprié pour fournir un contact ohmique avec une efficacité supérieure de collecte de charge.
Also published as
Latest bibliographic data on file with the International Bureau