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1. WO2020139077 - METHOD OF FORMING GRAPHENE BUMP STRUCTURE

Publication Number WO/2020/139077
Publication Date 02.07.2020
International Application No. PCT/MY2019/050132
International Filing Date 26.12.2019
IPC
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
CPC
H01L 21/0243
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
02428Structure
0243Surface structure
H01L 21/02488
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02439Materials
02488Insulating materials
H01L 21/02491
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02439Materials
02491Conductive materials
H01L 21/02502
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02494Structure
02496Layer structure
02502consisting of two layers
H01L 21/02527
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02524Group 14 semiconducting materials
02527Carbon, e.g. diamond-like carbon
H01L 21/02658
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02656Special treatments
02658Pretreatments
Applicants
  • MIMOS BERHAD [MY]/[MY]
Inventors
  • LEE, Hing Wah
  • LEE, Mai Woon
  • BIN MOHAMMAD HANIFF, Muhammad Aniq Shazni
  • BINTI SORIADI, Nurhidaya
  • BIN ADOM, Abdul Halim
Agents
  • H A RASHID, Ahmad Fadzlee
Priority Data
PI 201800293626.12.2018MY
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF FORMING GRAPHENE BUMP STRUCTURE
(FR) PROCÉDÉ DE FORMATION D'UNE STRUCTURE DE BOSSE AU GRAPHÈNE
Abstract
(EN)
The present invention relates to a method (200) of forming graphene bump structure (100) comprising the steps of providing (210) a substrate (10); etching (220) the substrate (10) to form a cavity structure (20); growing (230) a silicon dioxide layer (30) on top of the substrate (10); depositing (240) a thin metal catalyst layer (40) on top of the substrate (30); synthesizing (250) graphene layer (50) on top of the metal catalyst layer (40); depositing (260) an epoxy-based photoresist (60); removing (270) the thin metal catalyst layer (40), the silicon dioxide layer (30) and the epoxy-based photoresist (60) from the substrate (10); and patterning (280) the epoxy-based photoresist (60) to remove from the cavity structure (20) to form the graphene bump structure (100).
(FR)
La présente invention concerne un procédé (200) de formation d'une structure de bosse au graphène (100) comprenant les étapes consistant à utiliser (210) un substrat (10) ; à graver (220) le substrat (10) pour former une structure de cavité (20) ; à faire croître (230) une couche de dioxyde de silicium (30) sur le substrat (10) ; à déposer (240) une couche de catalyseur métallique mince (40) sur le substrat (30) ; à synthétiser (250) une couche de graphène (50) sur la couche de catalyseur métallique (40) ; à déposer (260) une résine photosensible à base d'époxy (60) ; à retirer (270) la couche de catalyseur métallique mince (40), la couche de dioxyde de silicium (30) et la résine photosensible à base d'époxy (60) du substrat (10) ; et à former des motifs (280) de la résine photosensible à base d'époxy (60) à des fins d'élimination de la structure de cavité (20) pour former la structure de bosse au graphène (100).
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