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1. WO2020139022 - SEMICONDUCTOR LIGHT-EMITTING DEVICE

Publication Number WO/2020/139022
Publication Date 02.07.2020
International Application No. PCT/KR2019/018608
International Filing Date 27.12.2019
IPC
H01L 33/38 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
H01L 33/62 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
62Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/54 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
52Encapsulations
54having a particular shape
H01L 33/64 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
64Heat extraction or cooling elements
H01L 33/10 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
10with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/56 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
52Encapsulations
56Materials, e.g. epoxy or silicone resin
CPC
H01L 33/10
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
10with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/38
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
H01L 33/54
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
52Encapsulations
54having a particular shape
H01L 33/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
52Encapsulations
56Materials, e.g. epoxy or silicone resin
H01L 33/62
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
H01L 33/64
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
64Heat extraction or cooling elements
Applicants
  • 안상정 AN, Sang Jeong [KR]/[KR]
Inventors
  • 안상정 AN, Sang Jeong
Priority Data
10-2018-017028227.12.2018KR
10-2019-003912903.04.2019KR
10-2019-005491010.05.2019KR
10-2019-007899701.07.2019KR
10-2019-009729109.08.2019KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) SEMICONDUCTOR LIGHT-EMITTING DEVICE
(FR) DISPOSITIF ÉLECTROLUMINESCENT À SEMI-CONDUCTEUR
(KO) 반도체 발광소자
Abstract
(EN)
Disclosed is a semiconductor light-emitting device comprising: a semiconductor light-emitting chip having an electrode; a mold, which is formed so as to have a first surface roughness, has a bottom portion on which the semiconductor light-emitting chip is placed, has, in the bottom portion, a through-hole with a surface having a second surface roughness that is different from the first surface roughness, and has a side thereof, which comes in contact with at least the semiconductor light-emitting chip, made of a material having reflectivity of 95% or greater with respect to light emitted from the semiconductor light-emitting chip; and a conductive part provided in the through-hole for electrical communication with the electrode.
(FR)
L'invention concerne un dispositif électroluminescent à semi-conducteur comprenant: une puce électroluminescente à semi-conducteur ayant une électrode; un moule, qui est formé de façon à avoir une première rugosité de surface, comporte une partie inférieure sur laquelle la puce électroluminescente à semi-conducteur est placée, présente, dans la partie inférieure, un trou traversant avec une surface ayant une seconde rugosité de surface qui est différente de la première rugosité de surface, et présente un côté de celui-ci, qui vient en contact avec au moins la puce électroluminescente à semi-conducteur, constituée d'un matériau ayant une réflectivité de 95 % ou plus par rapport à la lumière émise par la puce électroluminescente à semi-conducteur; et une partie conductrice disposée dans le trou traversant pour se trouver en communication électrique avec l'électrode.
(KO)
본 개시는 전극을 구비하는 반도체 발광 칩; 제1 표면 거칠기를 가지도록 형성되며, 반도체 발광 칩이 놓이는 바닥부를 가지고, 바닥부에 제1 표면 거칠기와 다른 제2 표면 거칠기를 가지는 표면으로 된 관통홀이 형성되어 있으며, 적어도 반도체 발광 칩과 면하는 측이 반도체 발광 칩에서 발광되는 빛에 대해 95% 이상의 반사율을 가지는 재질로 이루어진 몰드; 그리고 전극과의 전기적 연통을 위해 관통홀에 구비되는 도전부;를 포함하는 것을 특징으로 하는 반도체 발광소자(LIGHT EMITTING DEVICE)에 관한 것이다.
Also published as
Latest bibliographic data on file with the International Bureau