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1. WO2020138975 - MEMORY DEVICE AND MANUFACTURING METHOD THEREFOR

Publication Number WO/2020/138975
Publication Date 02.07.2020
International Application No. PCT/KR2019/018519
International Filing Date 26.12.2019
IPC
H01L 45/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
CPC
H01L 45/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
Applicants
  • 한양대학교 에리카산학협력단 INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS [KR]/[KR]
Inventors
  • 박태주 PARK, Tae Joo
  • 김대웅 KIM, Dae Woong
  • 석태준 SEOK, Tae Jun
  • 김혜림 KIM, Hye Rim
Agents
  • 박상열 PARK, Sangyoul
Priority Data
10-2018-016969626.12.2018KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) MEMORY DEVICE AND MANUFACTURING METHOD THEREFOR
(FR) DISPOSITIF DE MÉMOIRE ET SON PROCÉDÉ DE FABRICATION
(KO) 메모리 소자 및 그 제조 방법
Abstract
(EN)
A memory device is provided. The memory device may comprise: a first electrode; a resistance change layer placed on the first electrode and containing an alkali metal and a transition metal; and a second electrode placed on the resistance change layer, wherein the content of the alkali metal in the resistance change layer ranges from 40 at% (exclusive) to 88 at% (exclusive).
(FR)
L'invention porte sur un dispositif de mémoire. Le dispositif de mémoire peut comprendre : une première électrode ; une couche à changement de résistance placée sur la première électrode et contenant un métal alcalin et un métal de transition ; et une seconde électrode placée sur la couche à changement de résistance, la teneur en métal alcalin dans la couche à changement de résistance étant comprise dans la plage de 40 % atomique (exclus) à 88 % atomique (exclus).
(KO)
메모리 소자가 제공된다. 상기 메모리 소자는, 제1 전극, 상기 제1 전극 상에 배치되고, 알칼리 금속 및 전이 금속을 포함하는 저항 변화층, 및 상기 저항 변화층 상에 배치된 제2 전극을 포함하되, 상기 저항 변화층 내의 상기 알칼리 금속의 함량은 40 at% 초과 88 at% 미만인 것을 포함할 수 있다.
Also published as
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