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1. WO2020138970 - SUBSTRATE TREATMENT APPARATUS

Publication Number WO/2020/138970
Publication Date 02.07.2020
International Application No. PCT/KR2019/018512
International Filing Date 26.12.2019
IPC
H01L 21/67 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
CPC
H01L 21/67
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
Applicants
  • 주성엔지니어링(주) JUSUNG ENGINEERING CO., LTD. [KR]/[KR]
Inventors
  • 오동혁 OH, Dong Hyuk
  • 권수영 KWON, Su Young
  • 김종식 KIM, Jong Sik
Agents
  • 특허법인 천문 ASTRAN INT'L IP GROUP
Priority Data
10-2018-016910426.12.2018KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) SUBSTRATE TREATMENT APPARATUS
(FR) APPAREIL DE TRAITEMENT DE SUBSTRAT
(KO) 기판처리장치
Abstract
(EN)
The present invention relates to a substrate treatment apparatus comprising: a chamber in which a treatment process on a substrate is performed; a support unit coupled to the chamber and supporting the substrate; a lead coupled to the chamber so as to be disposed above the support unit; a purge gas injection unit which is coupled to the lead and injects a purge gas into a treatment space between the lead and the support unit in order to partition the treatment space into a plurality of treatment regions; a shield coupled to the lead so as to be disposed between the lead and the support unit; a first injection unit for injecting a first gas onto a first treatment region among the treatment regions; a second injection unit for injecting the first gas onto the first treatment region from a position spaced apart from the first injection unit; and a first partition wall unit which is coupled to the shield so that a first injection region disposed below the first injection unit, a second injection region disposed below the second injection unit, and a first partitioning space between the first injection region and the second injection region constitute the region in which the treatment process using the first gas is performed.
(FR)
La présente invention concerne un appareil de traitement de substrat comprenant : une chambre dans laquelle est réalisé un processus de traitement sur un substrat ; une unité de support accouplée à la chambre et supportant le substrat ; un conducteur accouplé à la chambre de façon à être disposé au-dessus de l'unité de support ; une unité d'injection de gaz de purge qui est accouplée au conducteur et injecte un gaz de purge dans un espace de traitement entre le fil et l'unité de support afin de diviser l'espace de traitement en une pluralité de régions de traitement ; un blindage accouplé au conducteur de façon à être disposé entre le conducteur et l'unité de support ; une première unité d'injection destinée à injecter un premier gaz sur une première région de traitement parmi les régions de traitement ; une seconde unité d'injection destinée à injecter le premier gaz sur la première région de traitement à partir d'une position espacée de la première unité d'injection ; et une première unité de paroi de séparation qui est accouplée au blindage de sorte qu'une première région d'injection disposée sous la première unité d'injection, une seconde région d'injection disposée sous la seconde unité d'injection, et un premier espace de séparation entre la première région d'injection et la seconde région d'injection constituent la région dans laquelle est réalisé le processus de traitement utilisant le premier gaz.
(KO)
본 발명은 기판에 대한 처리공정이 이루어지는 챔버; 상기 챔버에 결합되고, 기판을 지지하는 지지부; 상기 지지부의 상측에 배치되도록 상기 챔버에 결합된 리드; 상기 리드에 결합되고, 상기 리드와 상기 지지부 사이의 처리공간을 복수개의 처리영역으로 구획하기 위해 상기 처리공간으로 퍼지가스를 분사하는 퍼지가스분사부; 상기 리드와 상기 지지부의 사이에 배치되도록 상기 리드에 결합된 쉴드; 상기 처리영역들 중에서 제1처리영역에 제1가스를 분사하는 제1분사부; 상기 제1분사부로부터 이격된 위치에서 상기 제1처리영역에 상기 제1가스를 분사하는 제2분사부; 및 상기 제1분사부의 하측에 배치된 제1분사영역, 상기 제2분사부의 하측에 배치된 제2분사영역, 및 상기 제1분사영역과 상기 제2분사영역 사이의 제1이격공간을 상기 제1가스를 이용한 처리공정이 이루어지는 영역이 되도록 상기 쉴드에 결합된 제1격벽부를 포함하는 기판처리장치에 관한 것이다.
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