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1. WO2020138855 - BLANK MASK AND PHOTOMASK

Publication Number WO/2020/138855
Publication Date 02.07.2020
International Application No. PCT/KR2019/018175
International Filing Date 20.12.2019
IPC
G03F 1/32 2012.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
26Phase shift masks ; PSM blanks; Preparation thereof
32Attenuating PSM , e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
G03F 1/38 2012.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
CPC
G03F 1/32
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
1Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
26Phase shift masks [PSM]; PSM blanks; Preparation thereof
32Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof
G03F 1/38
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
1Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
Applicants
  • 주식회사 에스앤에스텍 S&S TECH CO., LTD. [KR]/[KR]
Inventors
  • 신철 SHIN, Cheol
  • 이종화 LEE, Jong-Hwa
  • 양철규 YANG, Chul-Kyu
  • 최민기 CHOI, Min-Ki
  • 신승협 SHIN, Seung-Hyup
  • 공길우 KONG, Gil-Woo
Agents
  • 허성원 HUH, Sung-Won
  • 서동헌 SEO, Dong-Heon
  • 이동욱 LEE, Dong-Uk
Priority Data
10-2018-016894126.12.2018KR
10-2019-002606607.03.2019KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) BLANK MASK AND PHOTOMASK
(FR) MASQUE VIERGE ET PHOTOMASQUE
(KO) 블랭크 마스크 및 포토마스크
Abstract
(EN)
A blank mask includes a light-shielding film and a hard film which are formed on a transparent substrate. The hard film is formed of a silicon compound containing at least one of oxygen, nitrogen, and carbon in silicon. Provided are a blank mask and a photomask which have an improved resolution and are improved in a critical dimension (CD) characteristic and a process window margin which are to be implemented. Accordingly, a blank mask and a photomask which have an excellent quality can be manufactured when patterns thereof are implemented to be 32nm or less, especially, 14nm or less.
(FR)
Un masque vierge comprend un film de protection contre la lumière et un film dur qui sont formés sur un substrat transparent. Le film dur est constitué d'un composé de silicium contenant au moins un élément parmi l'oxygène, l'azote et le carbone dans le silicium. L'invention concerne un masque vierge et un photomasque qui ont une résolution améliorée et sont améliorés en termes de caractéristique de dimension critique (CD) et de marge de fenêtre de traitement à mettre en œuvre. Par conséquent, un masque vierge et un photomasque qui ont une excellente qualité peuvent être fabriqués lorsque des motifs associés sont mis en œuvre pour être inférieurs ou égaux à 32 nm, en particulier, inférieurs ou égaux à 14 nm.
(KO)
블랭크마스크는 투명기판 상에 형성된 차광막과 하드필름을 구비한다. 하드필름은 실리콘에 산소, 질소, 탄소 중 적어도 하나 이상을 포함하는 실리콘 화합물로 형성된다. 해상도가 향상되고 구현하고자 하는 CD(Critical Dimension) 특성 및 공정 윈도우 마진(Process Window Margin)이 향상된 블랭크 마스크 및 포토마스크가 제공된다. 이에 따라 32nm 이하 특히 14nm 이하의 패턴 구현 시 우수한 품질을 가지는 블랭크 마스크 및 포토마스크의 제작이 가능하게 된다.
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