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1. WO2020138739 - SHOWER HEAD FOR CHEMICAL VAPOR DEPOSITION AND DEPOSITION APPARATUS INCLUDING SAME

Publication Number WO/2020/138739
Publication Date 02.07.2020
International Application No. PCT/KR2019/016615
International Filing Date 28.11.2019
IPC
C23C 16/455 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
455characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
CPC
C23C 16/455
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
C23C 16/45561
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45561Gas plumbing upstream of the reaction chamber
C23C 16/45565
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45563Gas nozzles
45565Shower nozzles
Applicants
  • (주)에스테크 S-TECH CO.,LTD. [KR]/[KR]
Inventors
  • 육영진 YOOK, Young Jin
  • 박진섭 PARK, Jin Sub
  • 김가현 KIM, Ka-Hyun
Agents
  • 특허법인 이룸리온 ERUUM & LEEON INTELLECTUAL PROPERTY LAW FIRM
Priority Data
10-2018-017191728.12.2018KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) SHOWER HEAD FOR CHEMICAL VAPOR DEPOSITION AND DEPOSITION APPARATUS INCLUDING SAME
(FR) POMME DE DOUCHE POUR DÉPÔT CHIMIQUE EN PHASE VAPEUR ET APPAREIL DE DÉPÔT COMPRENANT CELLE-CI
(KO) 화학 기상 증착용 샤워 헤드 및 이를 구비한 증착 장치
Abstract
(EN)
The present invention relates to a shower head for chemical vapor deposition and a deposition apparatus including same and, more particularly, to a shower head for chemical vapor deposition, which includes a supply tube for supplying reaction gas, a discharge tube for discharging discharge gas after reaction, and a reaction chamber, wherein the reaction chamber can be downsized by efficiently disposing the supply tube and the discharge tube and process speed can be improved by reducing residence time of the reaction gas. The present invention also relates to a deposition apparatus including same. To this end, the shower head for chemical vapor deposition according to the present invention includes a supply tube for supplying reaction gas and a discharge tube for discharging discharge gas after reaction. The supply tube and the discharge tube are disposed on one side of a process substrate, wherein one of the supply tube and the discharge tube may be disposed inside the other tube.
(FR)
La présente invention concerne une pomme de douche pour un dépôt chimique en phase vapeur et un appareil de dépôt comprenant celle-ci et, plus particulièrement, une pomme de douche pour un dépôt chimique en phase vapeur, qui comprend un tube d'alimentation pour fournir un gaz réactionnel, un tube d'évacuation pour évacuer un gaz d'évacuation après réaction, et une chambre réactionnelle, la chambre réactionnelle pouvant être réduite en taille en disposant efficacement le tube d'alimentation et le tube d'évacuation et la vitesse de traitement pouvant être améliorée en réduisant le temps de séjour du gaz réactionnel. La présente invention concerne également un appareil de dépôt comprenant celle-ci. À cet effet, la pomme de douche pour un dépôt chimique en phase vapeur selon la présente invention comprend un tube d'alimentation pour fournir un gaz réactionnel et un tube d'évacuation pour évacuer un gaz d'évacuation après réaction. Le tube d'alimentation et le tube d'évacuation sont disposés sur un côté d'un substrat de traitement, un tube parmi le tube d'alimentation et le tube d'évacuation pouvant être disposé à l'intérieur de l'autre tube.
(KO)
본 발명은 화학 기상 증착용 샤워 헤드 및 이를 구비한 증착 장치에 관한 것으로, 더욱 상세하게는 반응 가스 공급을 위한 공급 튜브와 반응 후 배출 가스의 배출을 위한 배출 튜브를 효율적으로 배치하여 반응 챔버의 소형화가 가능하고, 반응 가스 체류 시간 단축을 통한 공정 속도 향상이 가능한 화학 기상 증착용 샤워 헤드 및 이를 구비한 증착 장치에 관한 것이다. 이를 위한 본 발명에 따른 화학 기상 증착용 샤워 헤드는, 반응 가스를 공급하는 공급 튜브 및 반응 후 배출 가스를 배출하는 배출 튜브를 포함하고, 상기 공급 튜브와 상기 배출 튜브는 공정 기판의 일측에 배치되되, 상기 공급 튜브와 상기 배출 튜브 중 어느 하나의 튜브는 다른 하나의 튜브의 내측에 배치될 수 있다.
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