Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020138737 - ONE-COMPONENT POLISHING SLURRY COMPOSITION AND POLISHING METHOD USING SAME

Publication Number WO/2020/138737
Publication Date 02.07.2020
International Application No. PCT/KR2019/016567
International Filing Date 28.11.2019
IPC
C09G 1/02 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
GPOLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
1Polishing compositions
02containing abrasives or grinding agents
C09K 3/14 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
3Materials not provided for elsewhere
14Anti-slip materials; Abrasives
H01L 21/321 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
321After-treatment
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
CPC
C09G 1/02
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
GPOLISHING COMPOSITIONS
1Polishing compositions
02containing abrasives or grinding agents
C09K 3/14
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
3Materials not provided for elsewhere
14Anti-slip materials; Abrasives
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/321
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
321After treatment
Applicants
  • 주식회사 케이씨텍 KCTECH CO.,LTD. [KR]/[KR]
Inventors
  • 공현구 KONG, Hyun Goo
  • 황진숙 HWANG, Jin Sook
  • 황인설 HWANG, In Seol
Agents
  • 특허법인 무한 MUHANN PATENT & LAW FIRM
Priority Data
10-2018-017291528.12.2018KR
10-2019-011159009.09.2019KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) ONE-COMPONENT POLISHING SLURRY COMPOSITION AND POLISHING METHOD USING SAME
(FR) COMPOSITION DE SUSPENSION DE POLISSAGE À UN COMPOSANT ET PROCÉDÉ DE POLISSAGE L'UTILISANT
(KO) 일액형 연마 슬러리 조성물 및 이를 이용한 연마 방법
Abstract
(EN)
The present invention relates to a one-component polishing slurry composition and a polishing method using same and, more specifically, to a one-component polishing slurry composition and a polishing method using same, the one-component polishing slurry composition comprising: abrasive particles; and a polishing selectivity regulator, wherein the polishing selectivity regulator provides a change in the polishing selectivity of non-Prestonian behavior according to polishing pressure.
(FR)
La présente invention concerne une composition de suspension de polissage à un composant et un procédé de polissage l'utilisant et, plus spécifiquement, une composition de suspension de polissage à un composant et un procédé de polissage l'utilisant, la composition de suspension de polissage à un composant comprenant : des particules abrasives; et un régulateur de sélectivité de polissage, le régulateur de sélectivité de polissage fournissant un changement de la sélectivité de polissage d'un comportement non prestonien en fonction de la pression de polissage.
(KO)
본 발명은, 일액형 연마 슬러리 조성물 및 이를 이용한 연마 방법에 관한 것으로, 보다 구체적으로, 연마 입자; 및 연마 선택비 조절제;를 포함하고, 상기 연마 선택비 조절제는, 연마 압력에 따라 비-프레스토니안(non-Prestonian) 거동의 연마 선택비 변화를 제공하는 것인, 일액형 연마 슬러리 조성물 및 이를 이용한 연마 방법에 관한 것이다.
Also published as
Latest bibliographic data on file with the International Bureau