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1. WO2020138717 - CMP SLURRY COMPOSITION FOR POLISHING POLYCRYSTALLINE SILICON AND POLISHING METHOD USING SAME

Publication Number WO/2020/138717
Publication Date 02.07.2020
International Application No. PCT/KR2019/015718
International Filing Date 18.11.2019
IPC
C09G 1/02 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
GPOLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
1Polishing compositions
02containing abrasives or grinding agents
C09K 3/14 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
3Materials not provided for elsewhere
14Anti-slip materials; Abrasives
H01L 21/3105 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105After-treatment
CPC
C09G 1/02
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
GPOLISHING COMPOSITIONS
1Polishing compositions
02containing abrasives or grinding agents
C09K 3/14
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
3Materials not provided for elsewhere
14Anti-slip materials; Abrasives
H01L 21/3105
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3105After-treatment
Applicants
  • 주식회사 케이씨텍 KCTECH CO.,LTD. [KR]/[KR]
Inventors
  • 이재우 LEE, Jae Woo
  • 김지혜 KIM, Ji Hye
  • 최보혁 CHOI, Bo Hyeok
Agents
  • 특허법인 무한 MUHANN PATENT & LAW FIRM
Priority Data
10-2018-017225528.12.2018KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) CMP SLURRY COMPOSITION FOR POLISHING POLYCRYSTALLINE SILICON AND POLISHING METHOD USING SAME
(FR) COMPOSITION DE PÂTE CMP POUR LE POLISSAGE DE SILICIUM POLYCRISTALLIN ET PROCÉDÉ DE POLISSAGE L'UTILISANT
(KO) 다결정 실리콘 연마용 CMP 슬러리 조성물 및 그를 이용한 연마 방법
Abstract
(EN)
The present invention relates to a CMP slurry composition for polishing polycrystalline silicon and a polishing method using same. A CMP slurry composition for polishing polycrystalline silicon according to an embodiment of the present invention comprises: polishing particles; a surface roughness reducing agent; a polish regulator containing an organic acid; and a pH regulator.
(FR)
La présente invention concerne une composition de pâte CMP pour le polissage de silicium polycristallin et un procédé de polissage l'utilisant. Une composition de pâte CMP pour le polissage de silicium polycristallin selon un mode de réalisation de la présente invention comprend : des particules de polissage ; un agent de réduction de rugosité de surface ; un régulateur de polissage contenant un acide organique ; et un régulateur de pH.
(KO)
본 발명은 다결정 실리콘 연마용 CMP 슬러리 조성물 및 그를 이용한 연마 방법에 관한 것으로서, 본 발명의 일 실시예에 따른 다결정 실리콘 연마용 CMP 슬러리 조성물은 연마입자; 표면거칠기(roughness) 개선제; 유기산을 포함하는 연마조절제; 및 pH 조절제;를 포함한다.
Also published as
Latest bibliographic data on file with the International Bureau