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1. WO2020138709 - METHOD FOR ANALYZING SILICON CONCENTRATION IN PHOSPHORIC ACID SOLUTION

Publication Number WO/2020/138709
Publication Date 02.07.2020
International Application No. PCT/KR2019/015261
International Filing Date 11.11.2019
IPC
G01N 25/14 2006.1
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
25Investigating or analysing materials by the use of thermal means
14by using distillation, extraction, sublimation, condensation, freezing, or crystallisation
G01N 9/00 2006.1
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
9Investigating density or specific gravity of materials; Analysing materials by determining density or specific gravity
CPC
G01N 25/142
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
25Investigating or analyzing materials by the use of thermal means
14by using distillation, extraction, sublimation, condensation, freezing, or crystallisation
142by condensation
G01N 9/00
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
9Investigating density or specific gravity of materials; Analysing materials by determining density or specific gravity
Applicants
  • 주식회사 세미부스터 SEMIBOOSTER CO.,LTD. [KR]/[KR]
Inventors
  • 이승훈 LEE, Seung Hun
  • 이승현 LEE, Seung Hyun
Agents
  • 특허법인(유한) 해담 HAEDAM IP GROUP
Priority Data
10-2018-016862224.12.2018KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) METHOD FOR ANALYZING SILICON CONCENTRATION IN PHOSPHORIC ACID SOLUTION
(FR) PROCÉDÉ D’ANALYSE DE LA CONCENTRATION DE SILICIUM DANS UNE SOLUTION D’ACIDE PHOSPHORIQUE
(KO) 인산용액 중의 실리콘 농도 분석방법
Abstract
(EN)
The present invention relates to a method for analyzing the concentration of silicon by using the solubility of silicon in a phosphoric acid solution to analyze the concentration of silicon generated in the process of etching silicon nitride. The method for analyzing silicon concentration of the present invention has an effect of providing a method capable of analyzing only the concentration of silicon generated in the phosphoric acid process of etching silicon nitride, and optionally capable of analyzing the concentration of a silicon compound added to increase selectivity.
(FR)
La présente invention concerne un procédé d’analyse de la concentration de silicium utilisant la solubilité du silicium dans une solution d’acide phosphorique pour analyser la concentration de silicium générée dans le processus de gravure de nitrure de silicium. Le procédé d’analyse de la concentration de silicium de la présente invention a pour effet de fournir un procédé permettant d’analyser uniquement la concentration de silicium généré dans le processus de gravure de nitrure de silicium à l’acide phosphorique, et permettant éventuellement d’analyser la concentration d’un composé de silicium ajouté pour augmenter la sélectivité.
(KO)
본원 발명은 실리콘나이트라이드를 식각하는 공정에서 발생한 실리콘의 농도를 분석하기 위해 인산용액에서 실리콘의 용해도를 이용하여 실리콘의 농도를 분석하는 방법에 관한 것이다. 본원 발명의 실리콘 농도 분석방법은 실리콘나이트라이드를 식각하는 인산공정에서 생성되는 실리콘의 농도만을 분석할 수 있으며, 선택적으로는 선택비를 증가시키기 위해 첨가한 실리콘화합물의 농도도 분석할 수 있는 방법을 제공하는 효과가 있다.
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