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1. WO2020138625 - THIN FILM PACKAGE AND METHOD FOR FORMING SAME

Publication Number WO/2020/138625
Publication Date 02.07.2020
International Application No. PCT/KR2019/009914
International Filing Date 07.08.2019
IPC
H01L 23/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
31characterised by the arrangement
H01L 23/15 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
12Mountings, e.g. non-detachable insulating substrates
14characterised by the material or its electrical properties
15Ceramic or glass substrates
H01L 23/29 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
29characterised by the material
H01L 21/027 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
CPC
H01L 21/027
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
H01L 21/0274
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
0271comprising organic layers
0273characterised by the treatment of photoresist layers
0274Photolithographic processes
H01L 2224/11
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
10Bump connectors; Manufacturing methods related thereto
11Manufacturing methods
H01L 23/15
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
12Mountings, e.g. non-detachable insulating substrates
14characterised by the material or its electrical properties
15Ceramic or glass substrates
H01L 23/29
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
29characterised by the material ; , e.g. carbon
H01L 23/291
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
29characterised by the material ; , e.g. carbon
291Oxides or nitrides or carbides, e.g. ceramics, glass
Applicants
  • 주식회사 제이피드림 JPDREAM CO., LTD. [KR]/[KR]
Inventors
  • 서평보 SEO, Pyungbo
Agents
  • 이준성 LEE, Joon Sung
Priority Data
10-2018-017175328.12.2018KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) THIN FILM PACKAGE AND METHOD FOR FORMING SAME
(FR) BOÎTIER À FILM MINCE ET SON PROCÉDÉ DE FORMATION
(KO) 박막 패키지 및 그의 형성방법
Abstract
(EN)
A battery pack according to the present invention comprises: a semiconductor substrate including microelectromechanical systems (MEMS); a capping layer placed on the semiconductor substrate, having a curved shape, surrounding the microelectromechanical systems, and defining a hollow space around the microelectromechanical systems; and a protective layer placed on the capping layer so as to cover the capping layer.
(FR)
Un bloc-batterie selon la présente invention comprend : un substrat semi-conducteur comprenant des systèmes microélectromécaniques (MEMS); une couche de recouvrement placée sur le substrat semi-conducteur, ayant une forme incurvée, entourant les systèmes microélectromécaniques, et définissant un espace creux autour des systèmes microélectromécaniques; et une couche de protection placée sur la couche de recouvrement de manière à recouvrir la couche de recouvrement.
(KO)
본 발명에 따른 배터리 팩은, 미세전자기계 시스템(microelectromechanical systems; MEMS)을 포함하는 반도체 기판; 반도체 기판 상에 위치되어 굴곡 형상을 가지면서 미세전자기계 시스템을 둘러싸고 미세전자기계 시스템 주변에 중공(中空)을 한정하는 캡핑 막; 및 캡핑 막 상에서 캡핑 막을 덮는 보호 막을 포함한다.
Also published as
Latest bibliographic data on file with the International Bureau