Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020138597 - METHOD FOR MANUFACTURING MULTI-JUNCTION SOLAR CELL, AND MULTI-JUNCTION SOLAR CELL MANUFACTURED BY SAME

Publication Number WO/2020/138597
Publication Date 02.07.2020
International Application No. PCT/KR2019/004862
International Filing Date 23.04.2019
IPC
H01L 31/0725 2012.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
06characterised by at least one potential-jump barrier or surface barrier
072the potential barriers being only of the PN heterojunction type
0725Multiple junction or tandem solar cells
H01L 31/0224 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
H01L 31/0304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
0304including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/18 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC
H01L 31/0224
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
H01L 31/0304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
0304including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/0725
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
072the potential barriers being only of the PN heterojunction type
0725Multiple junction or tandem solar cells
H01L 31/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Y02E 10/544
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
544Solar cells from Group III-V materials
Y02P 70/50
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
70Climate change mitigation technologies in the production process for final industrial or consumer products
50Manufacturing or production processes characterised by the final manufactured product
Applicants
  • (재)한국나노기술원 KOREA ADVANCED NANO FAB CENTER [KR]/[KR]
Inventors
  • 정상현 JUNG, Sang Hyun
  • 강호관 KANG, Ho Kwan
  • 김창주 KIM, Chang Zoo
  • 신현범 SHIN, Hyun Beom
Agents
  • 이준성 LEE, Joon Sung
Priority Data
10-2018-017014927.12.2018KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) METHOD FOR MANUFACTURING MULTI-JUNCTION SOLAR CELL, AND MULTI-JUNCTION SOLAR CELL MANUFACTURED BY SAME
(FR) PROCÉDÉ DE FABRICATION D’UNE CELLULE SOLAIRE MULTI-JONCTION, ET CELLULE SOLAIRE MULTI-JONCTION AINSI FABRIQUÉE
(KO) 다중접합 태양전지의 제조방법 및 이에 의해 제조된 다중접합 태양전지
Abstract
(EN)
The present invention relates to a method for manufacturing a multi-junction solar cell, and a multi-junction solar cell manufactured by same, and comprises: a first step for forming a light absorption layer above a substrate for epitaxial growth; a second step for forming a back contact electrode above the light absorption layer; a third step for removing the substrate for epitaxial growth from the light absorption layer, and a fourth step for forming a front contact electrode above the light absorption layer on the side where the substrate for epitaxial growth has been removed, wherein the light absoprtion layer is formed with N sub-cells (N is a natural number greater than or equal to 2) having different absorption wavelengths from each other, and each sub-cell is joined via a tunnel junction to form a multi-junction.
(FR)
La présente invention concerne un procédé de fabrication d'une cellule solaire multi-jonction, et une cellule solaire multi-jonction ainsi fabriquée, et comprend : une première étape consistant à former une couche d'absorption de lumière au-dessus d'un substrat pour croissance épitaxiale ; une deuxième étape consistant à former une électrode de contact arrière au-dessus de la couche d'absorption de lumière ; une troisième étape consistant à retirer le substrat pour croissance épitaxiale à partir de la couche d'absorption de lumière, et une quatrième étape consistant à former une électrode de contact avant au-dessus de la couche d'absorption de lumière sur le côté où le substrat pour croissance épitaxiale a été retiré, la couche d’absorption de lumière étant formée avec N sous-cellules (N étant un nombre naturel supérieur ou égal à 2) ayant des longueurs d'onde d'absorption différentes les unes des autres, et chaque sous-cellule étant jointe par l'intermédiaire d'une jonction tunnel pour former une multi-jonction.
(KO)
본 발명은 다중접합 태양전지의 제조방법 및 이에 의해 제조된 다중접합 태양전지에 관한 것으로서, 에피성장용 기판 상부에 광흡수층을 형성시키는 제1단계와, 상기 광흡수층 상부에 후면전극을 형성시키는 제2단계와, 상기 광흡수층으로부터 상기 에피성장용 기판을 제거하는 제3단계 및 상기 에피성장용 기판이 제거된 측의 광흡수층 상부에 전면전극을 형성하는 제4단계를 포함하되, 상기 광흡수층은 서로 다른 흡수 파장을 갖는 N개의 서브셀(N은 2 이상의 자연수)로 이루어지며, 각 서브셀은 터널접합(Tunnel junction)되어 다중접합을 이루는 것을 특징으로 한다.
Also published as
Latest bibliographic data on file with the International Bureau