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1. WO2020138278 - METHOD FOR BONDING ELECTRONIC COMPONENT, AND BONDED STRUCTURE

Publication Number WO/2020/138278
Publication Date 02.07.2020
International Application No. PCT/JP2019/051100
International Filing Date 26.12.2019
IPC
H01L 33/36 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
H01L 21/60 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H05K 3/34 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3Apparatus or processes for manufacturing printed circuits
30Assembling printed circuits with electric components, e.g. with resistor
32electrically connecting electric components or wires to printed circuits
34by soldering
CPC
H01L 33/36
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
H05K 3/34
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3Apparatus or processes for manufacturing printed circuits
30Assembling printed circuits with electric components, e.g. with resistor
32electrically connecting electric components or wires to printed circuits
34by soldering
Applicants
  • 京セラ株式会社 KYOCERA CORPORATION [JP]/[JP]
Inventors
  • 村川 賢太郎 MURAKAWA, Kentaro
  • 正木 克明 MASAKI, Katsuaki
Agents
  • 特許業務法人HARAKENZO WORLD PATENT & TRADEMARK HARAKENZO WORLD PATENT & TRADEMARK
Priority Data
2018-24357626.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR BONDING ELECTRONIC COMPONENT, AND BONDED STRUCTURE
(FR) PROCÉDÉ DE LIAISON DE COMPOSANT ÉLECTRONIQUE, ET STRUCTURE LIÉE.
(JA) 電子部品の接合方法および接合構造体
Abstract
(EN)
The present disclosure relates to: a method for bonding an electronic component; and a bonded structure. A solder layer which comprises a gold-tin alloy containing tin in an amount of 20% by mass or more is formed on the side of a light-emitting element, and then a layer containing gold as the main component thereof is formed, as a bonding layer capable of being bonded to the solder layer, on the side of a submount. The solder layer and the bonding layer are heated at a temperature lower than the melting point of the gold-tin alloy in the solder layer to bond the light-emitting element and the submount to each other.
(FR)
La présente invention concerne : un procédé de liaison d'un composant électronique ; et une structure liée. Une couche de brasure qui comprend un alliage or-étain contenant de l'étain en une quantité de 20 % en masse ou plus est formée sur le côté d'un élément électroluminescent, puis une couche contenant de l'or en tant que composant principal de celle-ci est formée, en tant que couche de liaison pouvant être liée à la couche de brasure, sur le côté d'une embase. La couche de brasure et la couche de liaison sont chauffées à une température inférieure au point de fusion de l'alliage or-étain dans la couche de brasure pour lier l'élément électroluminescent et l'embase l'un à l'autre.
(JA)
本開示は、電子部品の接合方法および接合構造体に関する。発光素子側に、錫を20質量%以上含む金-錫合金からなるはんだ層を形成し、サブマウント側に、はんだ層と接合する接合層として、金を主成分として含む層を形成する。はんだ層と接合層とを、はんだ層の金-錫合金の融点未満の温度で加熱して発光素子とサブマウントとを接合する。
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