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1. WO2020138218 - SEMICONDUCTOR DEVICE AND PRODUCTION METHOD

Publication Number WO/2020/138218
Publication Date 02.07.2020
International Application No. PCT/JP2019/050950
International Filing Date 25.12.2019
IPC
H01L 21/265 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with wave or particle radiation
263with high-energy radiation
265producing ion implantation
H01L 21/322 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
322to modify their internal properties, e.g. to produce internal imperfections
H01L 21/8234 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
H01L 27/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
H01L 29/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
CPC
H01L 21/265
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
263with high-energy radiation
265producing ion implantation
H01L 21/26506
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
263with high-energy radiation
265producing ion implantation
26506in group IV semiconductors
H01L 21/322
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
322to modify their internal properties, e.g. to produce internal imperfections
H01L 21/8234
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
H01L 27/06
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
H01L 27/0664
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
0611integrated circuits having a two-dimensional layout of components without a common active region
0641without components of the field effect type
0647Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
0652Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
0664Vertical bipolar transistor in combination with diodes
Applicants
  • 富士電機株式会社 FUJI ELECTRIC CO., LTD. [JP]/[JP]
Inventors
  • 目黒 美佐稀 MEGURO Misaki
  • 吉村 尚 YOSHIMURA Takashi
  • 瀧下 博 TAKISHITA Hiroshi
  • 兒玉 奈緒子 KODAMA Naoko
  • 阿形 泰典 AGATA Yasunori
Agents
  • 龍華国際特許業務法人 RYUKA IP LAW FIRM
Priority Data
2018-24855928.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND PRODUCTION METHOD
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET SON PROCÉDÉ DE PRODUCTION
(JA) 半導体装置および製造方法
Abstract
(EN)
The present invention makes it possible to precisely control the area and donor concentration of a donor region that is generated by the bonding of crystal defects and hydrogen. Provided is a semiconductor device that, in the depth direction, has a hydrogen concentration distribution that has a hydrogen concentration peak, has a helium concentration distribution that has a helium concentration peak, and has a donor concentration distribution that has a first donor concentration peak and a second donor concentration peak, the hydrogen concentration peak and the first donor concentration peak being at a first depth, the helium concentration peak and the second donor concentration peak being at a second depth that is deeper than the first depth relative to a lower surface, and each concentration peak having an upward slope along which concentration values increase from the lower surface toward an upper surface, the value obtained by using the slope of the upward slope of the helium concentration peak to normalize the slope of the upward slope of the second donor concentration peak being smaller than the value obtained by using the slope of the upward slope of the hydrogen concentration peak to normalize the slope of the upward slope of the first donor concentration peak.
(FR)
La présente invention permet de contrôler avec précision la superficie et la concentration de donneur d'une région donneuse qui est générée par la liaison de défauts cristallins et d'hydrogène. L'invention concerne un dispositif à semi-conducteur qui, dans la direction de la profondeur, présente une distribution de concentration d'hydrogène présentant un pic de concentration d'hydrogène, présente une distribution de concentration d'hélium présentant un pic de concentration d'hélium, et présente une distribution de concentration de donneur présentant un premier pic de concentration de donneur et un second pic de concentration de donneur, le pic de concentration d'hydrogène et le premier pic de concentration de donneur étant à une première profondeur, le pic de concentration d'hélium et le second pic de concentration de donneur étant à une seconde profondeur qui est plus profonde que la première profondeur par rapport à une surface inférieure, et chaque pic de concentration ayant une pente ascendante le long de laquelle des valeurs de concentration augmentent de la surface inférieure vers une surface supérieure, la valeur obtenue en utilisant la pente de la pente ascendante du pic de concentration d'hélium pour normaliser la pente de la pente ascendante du second pic de concentration de donneur étant inférieure à la valeur obtenue en utilisant la pente de la pente ascendante du pic de concentration d'hydrogène pour normaliser la pente de la pente ascendante du premier pic de concentration de donneur.
(JA)
結晶欠陥と水素が結合することで生じるドナー領域の範囲およびドナー濃度を精度よく制御する。 深さ方向において、水素濃度分布が水素濃度ピークを有し、ヘリウム濃度分布がヘリウム濃度ピークを有し、ドナー濃度分布が第1のドナー濃度ピークと第2のドナー濃度ピークを有し、水素濃度ピークと第1のドナー濃度ピークは第1の深さに配置されており、ヘリウム濃度ピークと第2のドナー濃度ピークは、下面を基準として第1の深さよりも深い第2の深さに配置されており、それぞれの濃度ピークは、下面から上面に向かうにつれて濃度値が増大する上りスロープを有し、第2のドナー濃度ピークの上りスロープの傾きを、ヘリウム濃度ピークの上りスロープの傾きで規格化した値が、第1のドナー濃度ピークの上りスロープの傾きを、水素濃度ピークの上りスロープの傾きで規格化した値よりも小さい半導体装置を提供する。
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