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1. WO2020138202 - GRAPHITE THIN FILM/SILICON SUBSTRATE LAMINATE, METHOD FOR PRODUCING SAME AND SUBSTRATE FOR HIGH EXHAUST HEAT-TYPE ELECTRONIC DEVICES

Publication Number WO/2020/138202
Publication Date 02.07.2020
International Application No. PCT/JP2019/050910
International Filing Date 25.12.2019
IPC
H01L 21/02 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
B32B 9/00 2006.1
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
9Layered products essentially comprising a particular substance not covered by groups B32B11/-B32B29/137
C01B 32/21 2017.1
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
32Carbon; Compounds thereof
20Graphite
21After-treatment
C30B 29/06 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
CPC
B32B 9/00
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
9Layered products comprising a ; layer of a; particular substance not covered by groups B32B11/00 - B32B29/00
C01B 32/21
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
32Carbon; Compounds thereof
20Graphite
21After-treatment
C30B 29/06
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
H01L 21/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
Applicants
  • 国立研究開発法人産業技術総合研究所 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY [JP]/[JP]
Inventors
  • 長谷川 雅考 HASEGAWA Masataka
Priority Data
2018-24659228.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) GRAPHITE THIN FILM/SILICON SUBSTRATE LAMINATE, METHOD FOR PRODUCING SAME AND SUBSTRATE FOR HIGH EXHAUST HEAT-TYPE ELECTRONIC DEVICES
(FR) STRATIFIÉ DE SUBSTRAT DE SILICIUM/FILM MINCE DE GRAPHITE, SON PROCÉDÉ DE PRODUCTION ET SUBSTRAT POUR DISPOSITIFS ÉLECTRONIQUES DE TYPE À CHALEUR D'ÉCHAPPEMENT ÉLEVÉE
(JA) グラファイト薄膜/シリコン基板積層体、及びその製造方法、高排熱型電子デバイス用基板
Abstract
(EN)
The present invention provides a silicon device with excellent thermal characteristics of a graphite thin film, thereby offering a laminate for high exhaust heat-type electronic device applications. A graphite thin film/silicon substrate laminate according to the present invention is provided by activating the surface of a smoothed graphite thin film and the surface of a silicon substrate by means of cleaning and having the surfaces spontaneously join with each other by bringing the surfaces close to each other under deaerated conditions. This laminate, which is obtained by providing a graphite thin film on a silicon substrate, has the silicon substrate and the graphite thin film in direct contact with each other, while having an interface therebetween.
(FR)
La présente invention concerne un dispositif de silicium présentant d'excellentes caractéristiques thermiques d'un film mince de graphite, ce qui permet d'offrir un stratifié pour des applications de dispositif électronique de type à chaleur d'échappement élevée. Un stratifié de substrat de silicium/film mince de graphite selon la présente invention est fourni en activant la surface d'un film mince de graphite lissé et la surface d'un substrat de silicium au moyen d'un nettoyage et dont les surfaces se rejoignent spontanément en amenant les surfaces proches l'une de l'autre dans des conditions désaérées. Ce stratifié, qui est obtenu en fournissant un film mince de graphite sur un substrat de silicium, a le substrat de silicium et le film mince de graphite en contact direct l'un avec l'autre, tout en ayant une interface entre eux.
(JA)
グラファイト薄膜の優れた熱特性をシリコンデバイスに付与し、高排熱型電子デバイス用途に向けた積層体を提供する。 グラファイト薄膜/シリコン基板積層体は、脱気下で、平滑化されたグラファイト薄膜及びシリコン基板のそれぞれの表面をクリーニングして活性化させ、表面を互いに接近させて自発的に接合させることによって提供される。かかるシリコン基板の上にグラファイト薄膜を与えた積層体は、シリコン基板とグラファイト薄膜とが直接界面を挟んで接している。
Also published as
JP2020563360
Latest bibliographic data on file with the International Bureau