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1. WO2020137933 - ELECTRICAL CIRCUIT AND ELECTRICAL DEVICE

Publication Number WO/2020/137933
Publication Date 02.07.2020
International Application No. PCT/JP2019/050257
International Filing Date 23.12.2019
IPC
H01L 29/41 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
41characterised by their shape, relative sizes or dispositions
H01L 29/47 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
43characterised by the materials of which they are formed
47Schottky barrier electrodes
H01L 29/872 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861Diodes
872Schottky diodes
H01L 29/78 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H01L 21/329 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
328Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors
329the devices comprising one or two electrodes, e.g. diodes
H01L 29/88 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861Diodes
88Tunnel-effect diodes
CPC
H01L 29/41
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
H01L 29/47
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
43characterised by the materials of which they are formed
47Schottky barrier electrodes
H01L 29/78
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
H01L 29/872
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
861Diodes
872Schottky diodes
H01L 29/88
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
861Diodes
88Tunnel-effect diodes
Applicants
  • 京セラ株式会社 KYOCERA CORPORATION [JP]/[JP]
Inventors
  • 稲田 正樹 INADA, Masaki
Agents
  • 荒船 博司 ARAFUNE, Hiroshi
  • 荒船 良男 ARAFUNE, Yoshio
Priority Data
2018-24451727.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) ELECTRICAL CIRCUIT AND ELECTRICAL DEVICE
(FR) CIRCUIT ÉLECTRIQUE ET DISPOSITIF ÉLECTRIQUE
(JA) 電気回路及び電気装置
Abstract
(EN)
This electrical circuit includes: a sensor element S1 that outputs current signals; a Schottky barrier diode D1 connected to the sensor element; and, at the connection point between the sensor element and the Schottky barrier diode, a voltage-driven transistor T1 to which a gate electrode is connected. The Schottky barrier diode has an insulator layer 3 in part of the region between a metal layer 1 and a semiconductor layer 2 that form a Schottky junction SB. A reverse tunnel current can flow through the insulator layer 3.
(FR)
L'invention concerne un circuit électrique qui comprend : un élément capteur S1 qui délivre des signaux de courant ; une diode à barrière de Schottky D1 connectée à l'élément capteur ; et, au niveau du point de connexion entre l'élément capteur et la diode à barrière de Schottky, un transistor commandé en tension T1 auquel une électrode de grille est connectée. La diode à barrière de Schottky a une couche isolante 3 dans une partie de la région entre une couche métallique 1 et une couche semi-conductrice 2 qui forment une jonction de Schottky SB. Un courant de tunnel inverse peut circuler à travers la couche isolante 3.
(JA)
電気回路は、電流信号を出力するセンサ素子S1と、センサ素子に接続したショットキーバリアダイオードD1と、センサ素子とショットキーバリアダイオードの接続点に、ゲート電極を接続した電圧駆動のトランジスタT1と、を有し、ショットキーバリアダイオードは、ショットキー接合SBを形成する金属層1と半導体層2の間の一部の領域に、絶縁体層3を有する。絶縁体層3を通り、逆方向のトンネル電流が流れうる。
Also published as
JP2020563232
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