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1. WO2020137928 - REFLECTIVE MASK BLANK, REFLECTIVE MASK AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

Publication Number WO/2020/137928
Publication Date 02.07.2020
International Application No. PCT/JP2019/050236
International Filing Date 23.12.2019
IPC
G03F 1/24 2012.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
22Masks or mask blanks for imaging by radiation of 100 nm or shorter wavelength, e.g. X-ray masks, extreme ultra-violet masks; Preparation thereof
24Reflection masks; Preparation thereof
G03F 1/58 2012.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
54Absorbers, e.g. opaque materials
58having two or more different absorber layers, e.g. stacked multilayer absorbers
C23C 14/06 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
CPC
C23C 14/06
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
G03F 1/24
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
1Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultra-violet [EUV] masks; Preparation thereof
24Reflection masks; Preparation thereof
G03F 1/58
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
1Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
54Absorbers, e.g. of opaque materials
58having two or more different absorber layers, e.g. stacked multilayer absorbers
Applicants
  • HOYA株式会社 HOYA CORPORATION [JP]/[JP]
Inventors
  • 池邊 洋平 IKEBE Yohei
Agents
  • 特許業務法人 津国 TSUKUNI & ASSOCIATES
  • 山村 大介 YAMAMURA Daisuke
Priority Data
2018-24440627.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) REFLECTIVE MASK BLANK, REFLECTIVE MASK AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
(FR) ÉBAUCHE DE MASQUE RÉFLÉCHISSANT, MASQUE RÉFLÉCHISSANT ET PROCÉDÉ DE PRODUCTION DE DISPOSITIF À SEMI-CONDUCTEURS
(JA) 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
Abstract
(EN)
The present invention provides: a reflective mask blank which is capable of accurately transferring a pattern to a transfer-receiving body; a reflective mask; and a method for producing a semiconductor device. A reflective mask blank (100) according to the present invention comprises: a substrate (10); a multilayer reflective film (12) which is formed on the substrate (10) and reflects EUV light; and a laminate film (16) which is formed on the multilayer reflective film (12). The laminate film (16) has an absolute reflectance of 2.5% or less with respect to EUV light, and comprises a first layer (18) and a second layer (20) that is formed on the first layer (18); and the first layer (18) comprises a phase shift film which shifts the phase of EUV light. Alternatively, the laminate film (16) is a phase shift film which comprises a first layer (18) and a second layer (20) that is formed on the first layer (18), and which shifts the phase of EUV light; and the first layer (18) comprises an absorption layer that has an absolute reflectance of 2.5% or less with respect to EUV light.
(FR)
La présente invention concerne : une ébauche de masque réfléchissant qui est capable de transférer avec précision un motif à un corps de réception de transfert ; un masque réfléchissant ; et un procédé de production d'un dispositif à semi-conducteurs. Une ébauche de masque réfléchissant (100) conforme à la présente invention comprend un substrat (10), un film réfléchissant multicouche (12) qui est formé sur le substrat (10) et qui réfléchit la lumière EUV, et un film stratifié (16) qui est formé sur le film réfléchissant multicouche (12). Le film stratifié (16) possède une réflectance absolue de 2,5 % ou moins par rapport à la lumière EUV, et il comprend une première couche (18) et une seconde couche (20) qui est formée sur la première couche (18) ; et la première couche (18) comprend un film à déphasage qui décale la phase de la lumière EUV. En variante, le film stratifié (16) constitue un film à déphasage qui comprend une première couche (18) et une seconde couche (20) formée sur la première couche (18), et qui décale la phase de la lumière EUV ; et la première couche (18) comprend une couche d'absorption qui possède une réflectance absolue de 2,5 % ou moins par rapport à la lumière EUV.
(JA)
パターンを被転写体に正確に転写することが可能な反射型マスクブランク、反射型マスク、及び半導体装置の製造方法を提供する。 反射型マスクブランク(100)は、基板(10)と、基板(10)に形成されたEUV光を反射する多層反射膜(12)と、多層反射膜(12)の上に形成された積層膜(16)を含む。積層膜(16)は、第1の層(18)と、第1の層(18)の上に形成された第2の層(20)を含み、EUV光に対する絶対反射率が2.5%以下である。第1の層(18)は、EUV光の位相をシフトさせる位相シフト膜を含む。又は、積層膜(16)は、第1の層(18)と、第1の層(18)の上に形成された第2の層(20)を含み、EUV光の位相をシフトさせる位相シフト膜である。第1の層(18)は、EUV光に対する絶対反射率が2.5%以下である吸収層を含む。
Also published as
Latest bibliographic data on file with the International Bureau