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1. WO2020137855 - LIGHT-EMITTING DEVICE, AND METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE

Publication Number WO/2020/137855
Publication Date 02.07.2020
International Application No. PCT/JP2019/050031
International Filing Date 20.12.2019
IPC
H01L 33/54 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
52Encapsulations
54having a particular shape
H01L 33/60 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
58Optical field-shaping elements
60Reflective elements
CPC
H01L 25/167
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
16the devices being of types provided for in two or more different main groups of H01L27/00 - H01L49/00 ; and H01L51/00; , e.g. forming hybrid circuits
167comprising optoelectronic devices, e.g. LED, photodiodes
H01L 29/866
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
861Diodes
866Zener diodes
H01L 2933/0041
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0033relating to semiconductor body packages
0041relating to wavelength conversion elements
H01L 2933/005
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0033relating to semiconductor body packages
005relating to encapsulations
H01L 2933/0058
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0033relating to semiconductor body packages
0058relating to optical field-shaping elements
H01L 2933/0066
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0033relating to semiconductor body packages
0066relating to arrangements for conducting electric current to or from the semiconductor body
Applicants
  • 日亜化学工業株式会社 NICHIA CORPORATION [JP]/[JP]
Inventors
  • 小関 健司 OZEKI Kenji
  • 小島 淳資 KOJIMA Atsushi
  • 中井 千波 NAKAI Chinami
Agents
  • 特許業務法人磯野国際特許商標事務所 ISONO INTERNATIONAL PATENT OFFICE, P.C.
Priority Data
2018-24830728.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) LIGHT-EMITTING DEVICE, AND METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE
(FR) DISPOSITIF ÉLECTROLUMINESCENT ET SON PROCÉDÉ DE FABRICATION
(JA) 発光装置及び発光装置の製造方法
Abstract
(EN)
Provided are a light-emitting device having high light emission efficiency, and a method for manufacturing the light-emitting device. This light-emitting device (100) comprises a substrate (2) provided with a groove section (17) surrounding a first region (16), a light-emitting element (20) placed in the first region (16), a first covering member (30) that is provided in the groove of the groove section (17) and covers at least a part of the side surface of the light-emitting element (20), and a light-permeable member (50) provided over the first covering member (30) and the light-emitting element (20). The first covering member (30) comprises a containing layer (30a) that is provided in the groove of the groove section (17) and that contains a first reflective material, and a translucent layer (30b) that covers at least a part of the side surface of the light-emitting element (20).
(FR)
L'invention concerne un dispositif électroluminescent ayant une efficacité d'émission de lumière élevée, et un procédé de fabrication du dispositif électroluminescent. Ce dispositif électroluminescent (100) comprend un substrat (2) pourvu d'une section de rainure (17) entourant une première région (16), un élément électroluminescent (20) placé dans la première région (16), un premier élément de recouvrement (30) qui est disposé dans la rainure de la section de rainure (17) et recouvre au moins une partie de la surface latérale de l'élément électroluminescent (20), et un élément perméable à la lumière (50) disposé sur le premier élément de recouvrement (30) et l'élément électroluminescent (20). Le premier élément de recouvrement (30) comprend une couche de confinement (30a) qui est disposée dans la rainure de la section de rainure (17) et qui contient un premier matériau réfléchissant, et une couche translucide (30b) qui recouvre au moins une partie de la surface latérale de l'élément électroluminescent (20).
(JA)
発光効率が高い発光装置及び発光装置の製造方法を提供する。 発光装置(100)は、第1領域(16)を囲む溝部(17)を備えた基板(2)と、第1領域(16)に載置された発光素子(20)と、溝部(17)の溝内に設けられると共に発光素子(20)の側面の少なくとも一部を被覆する第1被覆部材(30)と、第1被覆部材(30)及び発光素子(20)上に設けられた光透過性部材(50)と、を備え、第1被覆部材(30)は、溝部(17)の溝内に設けられる第1反射材を含有する含有層(30a)と、発光素子(20)の側面の少なくとも一部を被覆する透光層(30b)と、を備える。
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