Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020137830 - PIEZOELECTRIC VIBRATION DEVICE

Publication Number WO/2020/137830
Publication Date 02.07.2020
International Application No. PCT/JP2019/049915
International Filing Date 19.12.2019
IPC
H01L 23/04 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
02Containers; Seals
04characterised by the shape
H03B 5/32 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
5Generation of oscillations using amplifier with regenerative feedback from output to input
30with frequency-determining element being electromechanical resonator
32being a piezo-electric resonator
H03H 9/02 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02Details
H01L 25/065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
065the devices being of a type provided for in group H01L27/78
H01L 25/07 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
07the devices being of a type provided for in group H01L29/78
H01L 25/18 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
CPC
H01L 23/04
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
02Containers; Seals
04characterised by the shape ; of the container or parts, e.g. caps, walls
H01L 25/065
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
065the devices being of a type provided for in group H01L27/00
H01L 25/07
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
07the devices being of a type provided for in group H01L29/00
H01L 25/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
18the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L51/00
H03B 5/32
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
5Generation of oscillations using amplifier with regenerative feedback from output to input
30with frequency-determining element being electromechanical resonator
32being a piezo-electric resonator
H03H 9/02
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
Applicants
  • 株式会社大真空 DAISHINKU CORPORATION [JP]/[JP]
Inventors
  • 石野 悟 ISHINO, Satoru
  • 吉岡 宏樹 YOSHIOKA, Hiroki
  • 藤原 宏樹 FUJIWARA, Hiroki
Agents
  • 特許業務法人あーく特許事務所 ARC PATENT ATTORNEYS' OFFICE
Priority Data
2018-24455927.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PIEZOELECTRIC VIBRATION DEVICE
(FR) DISPOSITIF DE VIBRATION PIÉZOÉLECTRIQUE
(JA) 圧電振動デバイス
Abstract
(EN)
This piezoelectric vibration device is provided with an inner space in which a vibrating section (11) of a crystal diaphragm (10) that includes a first excitation electrode (111) and a second excitation electrode (112) is hermetically sealed by joining a first sealing member (20) to the crystal diaphragm (10) and by joining a second sealing member (30) to the crystal diaphragm (10). A through-hole (33) is formed in the second sealing member (30), and formed on the inner wall face of the through-hole (33) is a through-electrode (331) for electrically connecting an electrode (34) formed on a first main face (301) to an external electrode terminal (32) formed on a second main face (302). The through-electrode (331) is provided with a structure which is corrosion-resistant to solder (120), and the through-electrode (331) electrically connects the electrode (34) of the first main face (301) to the external electrode terminal (32) of the second main face (302) by means of an electrically conductive metal other than silver (Au).
(FR)
L'invention concerne un dispositif de vibration piézoélectrique qui est pourvu d'un espace interne dans lequel une section vibrante (11) d'un diaphragme à cristaux (10), qui comprend une première électrode d'excitation (111) et une seconde électrode d'excitation (112), est hermétiquement scellée par liaison d'un premier élément d'étanchéité (20) à la membrane à cristaux (10) et d'un second élément d'étanchéité (30) à la membrane à cristaux (10). Un trou traversant (33) est formé dans le second élément d'étanchéité (30), et formée sur la face de paroi interne du trou traversant (33) une électrode traversante (331) afin de connecter électriquement une électrode (34), formée sur une première face principale (301), à une borne d'électrode externe (32), formée sur une seconde face principale (302). L'électrode traversante (331) est pourvue d'une structure résistante à la corrosion à la soudure (120), et l'électrode traversante (331) connecte électriquement l'électrode (34) de la première face principale (301) à la borne d'électrode externe (32) de la seconde face principale (302) au moyen d'un métal conducteur de l'électricité autre que l'argent (Au).
(JA)
本発明に係る圧電振動デバイスでは、第1封止部材(20)と水晶振動板(10)とが接合され、第2封止部材(30)と水晶振動板(10)とが接合されることによって、第1励振電極(111)と第2励振電極(112)とを含む水晶振動板(10)の振動部(11)を気密封止した内部空間が設けられており、第2封止部材(30)には、貫通孔(33)が形成され、貫通孔(33)の内壁面には、第1主面(301)に形成された電極(34)と、第2主面(302)に形成された外部電極端子(32)とを導通するための貫通電極(331)が形成され、貫通電極(331)には、半田(120)に対する耐侵食構造が設けられており、貫通電極(331)は、Au以外の導電性金属によって、第1主面(301)の電極(34)と、第2主面(302)の外部電極端子(32)とが導通される。
Latest bibliographic data on file with the International Bureau