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1. WO2020137826 - GATE DRIVE CIRCUIT AND SWITCHING DEVICE USING SAME

Publication Number WO/2020/137826
Publication Date 02.07.2020
International Application No. PCT/JP2019/049901
International Filing Date 19.12.2019
IPC
H02M 1/08 2006.01
HELECTRICITY
02GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
1Details of apparatus for conversion
08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H03K 17/691 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and -breaking
51characterised by the use of specified components
56by the use, as active elements, of semiconductor devices
687the devices being field-effect transistors
689with galvanic isolation between the control circuit and the output circuit
691using transformer coupling
CPC
H02M 1/08
HELECTRICITY
02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
1Details of apparatus for conversion
08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H03K 17/691
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and –breaking
51characterised by the components used
56by the use, as active elements, of semiconductor devices
687the devices being field-effect transistors
689with galvanic isolation between the control circuit and the output circuit
691using transformer coupling
Applicants
  • パナソニックIPマネジメント株式会社 PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. [JP]/[JP]
Inventors
  • 榎本 真悟 ENOMOTO, Shingo
  • 永井 秀一 NAGAI, Shuichi
  • 河井 康史 KAWAI, Yasufumi
  • 根来 昇 NEGORO, Noboru
  • 田畑 修 TABATA, Osamu
  • 崔 成伯 CHOE, Songbaek
  • 永冨 雄太 NAGATOMI, Yuta
Agents
  • 新居 広守 NII, Hiromori
  • 寺谷 英作 TERATANI, Eisaku
  • 道坂 伸一 MICHISAKA, Shinichi
Priority Data
2018-24794928.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) GATE DRIVE CIRCUIT AND SWITCHING DEVICE USING SAME
(FR) CIRCUIT D'ENTRAÎNEMENT DE GRILLE ET DISPOSITIF DE COMMUTATION UTILISANT CE DERNIER
(JA) ゲート駆動回路およびそれを用いたスイッチング装置
Abstract
(EN)
An insulated gate drive circuit (1) which drives a semiconductor switching element comprises: a transmission unit (10) which generates a power signal that acts as the basis for gate driving of a semiconductor switching element; a first insulated element (3) which transmits a power signal in an electrically insulated state; a receiving unit (12) which performs gate driving of a semiconductor switching element by means of a power signal output from the first insulated element (3); and a transmission circuit for transmitting the state detected by the receiving unit side to the transmission unit side. The transmission circuit transmits the abovementioned state by branching part of the power signal using an insulated path (3c) distinct from the path which transmits the power signal on the first insulated element (3).
(FR)
Circuit d'attaque de grille isolé (1) qui entraîne un élément de commutation à semi-conducteur comprenant : une unité de transmission (10) qui génère un signal de puissance qui sert de base pour l'entraînement de grille d'un élément de commutation à semi-conducteur ; un premier élément isolé (3) qui transmet un signal de puissance dans un état électriquement isolé ; une unité de réception (12) qui réalise un entraînement de grille d'un élément de commutation à semi-conducteur au moyen d'un signal de puissance délivré par le premier élément isolé (3) ; et un circuit de transmission pour transmettre l'état détecté par le côté unité de réception au côté unité de transmission. Le circuit de transmission transmet l'état précité par ramification d'une partie du signal de puissance à l'aide d'un trajet isolé (3c) distinct du trajet qui transmet le signal de puissance sur le premier élément isolé (3).
(JA)
半導体スイッチング素子を駆動する絶縁型のゲート駆動回路(1)は、半導体スイッチング素子のゲート駆動の基礎となる電力信号を生成する送信部(10)と、電力信号を電気的に絶縁された状態で伝送する第1絶縁素子(3)と、第1絶縁素子(3)から出力される電力信号により、半導体スイッチング素子のゲート駆動を行う受信部(12)と、受信部側で検出した状態を送信部側に伝達する伝達回路とを備え、伝達回路は、第1絶縁素子(3)上の電力信号を伝送する経路とは別の絶縁経路(3c)を用いて、電力信号の一部を分岐させることにより上記の状態を伝達する。
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