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1. WO2020137804 - VAPOR PHASE GROWTH APPARATUS

Publication Number WO/2020/137804
Publication Date 02.07.2020
International Application No. PCT/JP2019/049835
International Filing Date 19.12.2019
IPC
C30B 25/14 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
14Feed and outlet means for the gases; Modifying the flow of the reactive gases
H01L 21/205 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C30B 29/38 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
38Nitrides
C23C 16/34 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
34Nitrides
C23C 16/448 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
448characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
CPC
C23C 16/34
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
34Nitrides
C23C 16/448
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
448characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C30B 25/14
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
14Feed and outlet means for the gases; Modifying the flow of the reactive gases
C30B 29/38
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
38Nitrides
H01L 21/205
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth ; solid phase epitaxy
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Applicants
  • 国立大学法人東海国立大学機構 NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM [JP]/[JP]
Inventors
  • 新田 州吾 NITTA Shugo
  • 藤元 直樹 FUJIMOTO Naoki
  • 天野 浩 AMANO Hiroshi
  • 本田 善央 HONDA Yoshio
Agents
  • 特許業務法人 快友国際特許事務所 KAI-U PATENT LAW FIRM
Priority Data
2018-24343426.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) VAPOR PHASE GROWTH APPARATUS
(FR) APPAREIL DE CROISSANCE EN PHASE VAPEUR
(JA) 気相成長装置
Abstract
(EN)
Provided is a technique relating to a vapor phase growth apparatus for a compound semiconductor. The vapor phase growth apparatus includes a reaction container. The vapor phase growth apparatus includes a wafer holder disposed in the reaction container. The vapor phase growth apparatus includes a first source gas supply pipe that supplies a first source gas into the reaction container. The vapor phase growth apparatus includes a second source gas supply pipe that supplies a second source gas which reacts with the first source gas into the reaction container. The vapor phase growth apparatus includes a specific gas supply pipe in which a solid part is disposed on a supply path. The vapor phase growth apparatus includes a first heating unit that heats the solid part to a predetermined temperature or higher. The solid part includes a matrix region and a first region continuously disposed in the matrix region. The matrix region is a region that does not decompose at the predetermined temperature. The first region is a region that decomposes at the predetermined temperature and includes Mg.
(FR)
L'invention concerne une technique se rapportant à un appareil de croissance en phase vapeur pour un semi-conducteur composé. L'appareil de croissance en phase vapeur comprend un récipient de réaction. L'appareil de croissance en phase vapeur comprend un support de tranche disposé dans le récipient de réaction. L'appareil de croissance en phase vapeur comprend un premier tuyau d'alimentation en gaz source qui fournit un premier gaz source dans le récipient de réaction. L'appareil de croissance en phase vapeur comprend un second tuyau d'alimentation en gaz source qui fournit un second gaz source réagissant avec le premier gaz source dans le récipient de réaction. L'appareil de croissance en phase vapeur comprend un tuyau d'alimentation en gaz spécifique dans lequel une partie solide est disposée sur un trajet d'alimentation. L'appareil de croissance en phase vapeur comprend une première unité de chauffage qui chauffe la partie solide à une température prédéterminée ou supérieure. La partie solide comprend une région de matrice et une première région disposée en continu dans la région de matrice. La région de matrice est une région qui ne se décompose pas à la température prédéterminée. La première région est une région qui se décompose à la température prédéterminée et comprend du Mg.
(JA)
化合物半導体の気相成長装置に関する技術を提供する。気相成長装置は、反応容器を備える。気相成長装置は、反応容器内に配置されているウェハホルダを備える。気相成長装置は、第1原料ガスを反応容器内に供給する第1原料ガス供給管を備える。気相成長装置は、第1原料ガスと反応する第2原料ガスを反応容器内に供給する第2原料ガス供給管を備える。気相成長装置は、供給経路上に固体部が配置されている特定ガス供給管を備える。気相成長装置は、固体部を所定温度以上に加熱する第1加熱部を備える。固体部は、母体領域と、母体領域内に連続的に配置されている第1領域と、を備えている。母体領域は所定温度で分解しない領域である。第1領域は所定温度で分解するとともにMgを含んだ領域である。
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