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1. WO2020137731 - LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND METHOD FOR USING LIGHT-EMITTING DEVICE

Publication Number WO/2020/137731
Publication Date 02.07.2020
International Application No. PCT/JP2019/049558
International Filing Date 18.12.2019
IPC
C09K 11/80 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
11Luminescent, e.g. electroluminescent, chemiluminescent, materials
08containing inorganic luminescent materials
77containing rare earth metals
80containing aluminium or gallium
A61N 5/067 2006.01
AHUMAN NECESSITIES
61MEDICAL OR VETERINARY SCIENCE; HYGIENE
NELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
5Radiation therapy
06using light
067using laser light
H01L 33/50 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
50Wavelength conversion elements
H01S 5/022 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
CPC
H01L 33/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
50Wavelength conversion elements
H01S 5/022
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
Applicants
  • パナソニックIPマネジメント株式会社 PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. [JP]/[JP]
Inventors
  • 新田 充 NITTA Mitsuru
  • 大塩 祥三 OSHIO Shozo
  • 阿部 岳志 ABE Takeshi
Agents
  • 伊藤 正和 ITO Masakazu
  • 松本 隆芳 MATSUMOTO Takayoshi
  • 細川 覚 HOSOKAWA Satoru
  • 森 太士 MORI Futoshi
Priority Data
2018-24549427.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND METHOD FOR USING LIGHT-EMITTING DEVICE
(FR) DISPOSITIF ÉLECTROLUMINESCENT, DISPOSITIF ÉLECTRONIQUE, ET PROCÉDÉ D'UTILISATION D'UN DISPOSITIF ÉLECTROLUMINESCENT
(JA) 発光装置、電子機器及び発光装置の使用方法
Abstract
(EN)
This light-emitting device 1 includes: a light source 2 that emits primary light 6; and a first phosphor 4 that absorbs and converts the primary light 6 into first wavelength-converted light 7 having a longer wavelength than the primary light 6. The primary light 6 is a laser beam. The first wavelength-converted light 7 includes fluorescence based on Cr3+ electron energy transitions. The fluorescence spectrum of the first wavelength-converted light 7 has a maximum fluorescence intensity value in a wavelength region of greater than a wavelength of 710 nm.
(FR)
Ce dispositif électroluminescent 1 comprend: une source de lumière2 qui émet une lumière primaire 6; et un premier luminophore 4 qui absorbe et convertit la lumière primaire 6 en une première lumière convertie en longueur d'onde 7 ayant une longueur d'onde plus longue que la lumière primaire 6. La lumière primaire 6 est un faisceau laser. La première lumière convertie en longueur d'onde 7 inclut une fluorescence basée sur des transitions d'énergie d'électrons Cr3+. Le spectre de fluorescence de la première lumière convertie en longueur d'onde 7 a une valeur d'intensité de fluorescence maximale dans une région de longueur d'onde supérieure à une longueur d'onde de 710 nm.
(JA)
発光装置1は、一次光6を放射する光源と2、一次光6を吸収して一次光6よりも長波長の第一の波長変換光7に変換する第一の蛍光体4と、を備える発光装置1であって、一次光6はレーザー光であり、第一の波長変換光7は、Cr3+の電子エネルギー遷移に基づく蛍光を含み、第一の波長変換光7の蛍光スペクトルは、波長710nmを超える波長領域に蛍光強度最大値を有する。
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Latest bibliographic data on file with the International Bureau