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1. WO2020137648 - QUARTZ GLASS CRUCIBLE, METHOD FOR PRODUCING SILICON SINGLE CRYSTAL USING SAME, METHOD FOR MEASURING INFRARED TRANSMITTANCE OF QUARTZ GLASS CRUCIBLE, AND METHOD FOR MANUFACTURING QUARTZ GLASS CRUCIBLE

Publication Number WO/2020/137648
Publication Date 02.07.2020
International Application No. PCT/JP2019/049120
International Filing Date 16.12.2019
IPC
C30B 29/06 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
C03B 20/00 2006.01
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
BMANUFACTURE OR SHAPING OF GLASS, OR OF MINERAL OR SLAG WOOL; SUPPLEMENTARY PROCESSES IN THE MANUFACTURE OR SHAPING OF GLASS, OR OF MINERAL OR SLAG WOOL
20Processes specially adapted for the production of quartz or fused silica articles
C30B 15/10 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
10Crucibles or containers for supporting the melt
F27B 14/10 2006.01
FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
27FURNACES; KILNS, OVENS OR RETORTS
BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
14Crucible or pot furnaces; Tank furnaces
08Details peculiar to crucible, pot or tank furnaces
10Crucibles
CPC
C03B 20/00
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
20Processes specially adapted for the production of quartz or fused silica articles ; , not otherwise provided for
C30B 15/10
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
10Crucibles or containers for supporting the melt
C30B 29/06
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
F27B 14/10
FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
27FURNACES; KILNS; OVENS; RETORTS
BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
14Crucible or pot furnaces
08Details peculiar to crucible or pot furnaces
10Crucibles
Applicants
  • 株式会社SUMCO SUMCO CORPORATION [JP]/[JP]
Inventors
  • 北原 賢 KITAHARA Ken
  • 福井 正徳 FUKUI Masanori
  • 岸 弘史 KISHI Hiroshi
  • 片野 智一 KATANO Tomokazu
  • 北原 江梨子 KITAHARA Eriko
Agents
  • 鷲頭 光宏 WASHIZU Mitsuhiro
  • 緒方 和文 OGATA Kazufumi
Priority Data
2018-24436127.12.2018JP
2018-24436227.12.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) QUARTZ GLASS CRUCIBLE, METHOD FOR PRODUCING SILICON SINGLE CRYSTAL USING SAME, METHOD FOR MEASURING INFRARED TRANSMITTANCE OF QUARTZ GLASS CRUCIBLE, AND METHOD FOR MANUFACTURING QUARTZ GLASS CRUCIBLE
(FR) CREUSET EN VERRE DE QUARTZ, PROCÉDÉ DE PRODUCTION D'UN MONOCRISTAL DE SILICIUM L'UTILISANT, PROCÉDÉ DE MESURE DU FACTEUR DE TRANSMISSION DANS L'INFRAROUGE D'UN CREUSET EN VERRE DE QUARTZ, ET PROCÉDÉ DE FABRICATION D'UN CREUSET EN VERRE DE QUARTZ
(JA) 石英ガラスルツボ及びこれを用いたシリコン単結晶の製造方法並びに石英ガラスルツボの赤外線透過率測定方法及び製造方法
Abstract
(EN)
[Problem] To provide a quartz glass crucible capable of increasing the production yield of a silicon single crystal having a low oxygen concentration. [Solution] The present invention provides a quartz glass crucible 1 having: cylindrical side wall portions 10a; a bottom portion 10b; and corner portions 10c interconnecting the side wall portions 10a and the bottom portion 10b, wherein the quartz glass crucible 1 is provided with: a transparent layer 11 made of a quartz glass which does not contain a bubble; a bubble layer 12 formed on the outside of the transparent layer 11 and made of a quartz glass containing a large number of bubbles; and a semi-molten layer 13 which is formed on the outside of the bubble layer 12 and in which raw silica powder is solidified in a semi-molten state. The infrared transmittance of the corner portions 10c is 25-51% in a state in which the semi-molten layer 13 is excluded, the infrared transmittance of the corner portions 10c is lower than the infrared transmittance of the side wall portions 10a in a state in which the semi-molten layer 13 is excluded, and the infrared transmittance of the side wall portions 10a is lower than the infrared transmittance of the bottom portion 10b in a state in which the semi-molten layer 13 is excluded.
(FR)
L'invention aborde le problème consistant à fournir un creuset de verre de quartz susceptible d'augmenter le rendement de production d'un monocristal de silicium présentant une faible concentration d'oxygène. La présente invention concerne à cet effet un creuset en verre de quartz (1) ayant : des parties parois latérales (10a) cylindriques, une partie de fond (10b) et des parties de coin (10c) qui relient les unes aux autres les parties parois latérales (10a) et la partie de fond (10b), le creuset en verre de quartz (1) comprenant : une couche transparente (11) fabriquée en un verre de quartz qui ne contient pas de bulles ; une couche de bulles (12) formée sur la face extérieure de la couche transparente (11) et fabriquée en un verre de quartz contenant un grand nombre de bulles ; et une couche semi-fondue (13) qui est formée sur la face extérieure de la couche de bulles (12) et dans laquelle une poudre de silice brute est solidifiée à l'état semi-fondu. Le facteur de transmission dans l'infrarouge des parties de coin (10c) est de 25 à 51 % dans un état dans lequel est exclue la couche semi-fondue (13), le facteur de transmission dans l'infrarouge des parties de coin (10c) est inférieur au facteur de transmission dans l'infrarouge des parties parois latérales (10a) dans un état dans lequel est exclue la couche semi-fondue (13), et le facteur de transmission dans l'infrarouge des parties parois latérales (10a) est inférieur au facteur de transmission dans l'infrarouge de la partie de fond (10b) dans un état dans lequel est exclue la couche semi-fondue (13).
(JA)
【課題】酸素濃度が低いシリコン単結晶の製造歩留まりを高めることが可能な石英ガラスルツボを提供する。 【解決手段】円筒状の側壁部10aと、底部10bと、側壁部10aと底部10bとをつなぐコーナー部10cとを有する石英ガラスルツボ1であって、気泡を含まない石英ガラスからなる透明層11と、透明層11の外側に形成され、多数の気泡を含む石英ガラスからなる気泡層12と、気泡層12の外側に形成され、原料シリカ粉が半溶融状態で固化した半溶融層13とを備えている。半溶融層13を除いた状態でのコーナー部10cの赤外線透過率は25~51%であり、半溶融層13を除いた状態でのコーナー部10cの赤外線透過率は側壁部10aの赤外線透過率よりも低く、半溶融層13を除いた状態での側壁部10aの赤外線透過率は底部10bの赤外線透過率よりも低い。
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