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1. WO2020137558 - EXCHANGE COUPLING FILM, MAGNETORESISTANCE EFFECT ELEMENT IN WHICH SAME IS USED, AND MAGNETIC DETECTION DEVICE

Publication Number WO/2020/137558
Publication Date 02.07.2020
International Application No. PCT/JP2019/048560
International Filing Date 11.12.2019
IPC
H01L 43/08 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
G01R 33/09 2006.01
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
02Measuring direction or magnitude of magnetic fields or magnetic flux
06using galvano-magnetic devices
09Magneto-resistive devices
H01F 10/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
08characterised by magnetic layers
10characterised by the composition
12being metals or alloys
H01L 43/10 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10Selection of materials
CPC
G01R 33/09
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
02Measuring direction or magnitude of magnetic fields or magnetic flux
06using galvano-magnetic devices, e.g. Hall effect devices; using magneto-resistive devices
09Magnetoresistive devices
H01F 10/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
08characterised by magnetic layers
10characterised by the composition
12being metals or alloys
H01L 43/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
H01L 43/10
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10Selection of materials
Applicants
  • アルプスアルパイン株式会社 ALPS ALPINE CO., LTD. [JP]/[JP]
Inventors
  • 齋藤 正路 SAITO, Masamichi
  • 小池 文人 KOIKE, Fumihito
Agents
  • 大窪 克之 OKUBO, Katsuyuki
Priority Data
2018-24444627.12.2018JP
2019-09786124.05.2019JP
2019-15366926.08.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) EXCHANGE COUPLING FILM, MAGNETORESISTANCE EFFECT ELEMENT IN WHICH SAME IS USED, AND MAGNETIC DETECTION DEVICE
(FR) PELLICULE DE COUPLAGE D’ÉCHANGE, ÉLÉMENT À EFFET DE MAGNÉTORÉSISTANCE DANS LEQUEL CETTE DERNIÈRE EST UTILISÉE, ET DISPOSITIF DE DÉTECTION MAGNÉTIQUE
(JA) 交換結合膜ならびにこれを用いた磁気抵抗効果素子および磁気検出装置
Abstract
(EN)
The present invention provides an exchange coupling film (10) in which a magnetic field (Hex) is high, the magnetic field being such that the orientation of magnetism of a fixed magnetic layer is reversed, and which has exceptional ferromagnetic field resistance, the exchange coupling film being characterized in that: an anti-ferromagnetic layer 2 and a fixed magnetic layer 3 provided with a strong magnetic layer are laminated; the antiferromagnetic layer 2 has a structure in which an IrMn layer 2a, a first PtMn layer 2b, a PtCr layer 2c and a second PtMn layer 2d are laminated in the stated order; and the IrMn layer 2a contacts the fixed magnetic layer 3. In some cases, the thickness d4 of the second PtMn layer 2d is preferably between 0 Å and 60 Å; in some cases, the thickness d3 of the PtCr layer 2c is preferably greater than or equal to 100 Å; and in some cases, the thickness (d1 + d2 + d3 + d4) of the entire ferromagnetic layer 2 is preferably less than or equal to 200 Å.
(FR)
La présente invention concerne une pellicule de couplage d’échange (10) dans laquelle un champ magnétique (Hex) est élevé, le champ magnétique étant tel que l’orientation de magnétisme d’une couche magnétique fixe est inversée, et qui a une résistance de champ ferromagnétique exceptionnelle, la pellicule de couplage d’échange étant caractérisée : en ce qu’une couche antiferromagnétique (2) et une couche magnétique fixe (3) comportant une couche fortement magnétique sont stratifiées ; en ce que la couche antiferromagnétique (2) a une structure dans laquelle une couche d’IrMn (2a), une première couche de PtMn (2b), une couche de PtCr (2c), et une deuxième couche de PtMn (2d) sont stratifiées dans l’ordre indiqué ; et en ce que la couche d’IrMn (2a) est en contact avec la couche magnétique fixe (3). Dans certains cas, l’épaisseur (d4) de la deuxième couche de PtMn (2d) est comprise de préférence entre 0 Å et 60 Å ; dans certains cas, l’épaisseur (d3) de la couche de PtCr (2c) est de préférence supérieure ou égale à 100 Å ; et dans certains cas, l’épaisseur (d1 + d2 + d3 + d4) de l’ensemble de la couche ferromagnétique (2) est de préférence inférieure ou égale à 200 Å.
(JA)
固定磁性層の磁化の向きが反転する磁界(Hex)が大きく強磁場耐性に優れる交換結合膜は、反強磁性層2と強磁性層を備える固定磁性層3とが積層され、反強磁性層2は、IrMn層2a、第1のPtMn層2b、PtCr層2cおよび第2のPtMn層2dが、この順番で積層された構造を有し、IrMn層2aが固定磁性層3に接していることを特徴とする交換結合膜10であって、第2のPtMn層2dの厚さd4が0Å超60Å未満であることが好ましい場合があり、PtCr層2cの厚さd3が100Å以上であることが好ましい場合があり、反強磁性層2の全体の厚さ(d1+d2+d3+d4)が200Å以下であることが好ましい場合がある。
Also published as
JP2020563049
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